| 2/27/1998 | Y. Yamamura | 1982 | |||||
| ######## | Continuous wave laser RIS mass spectrometric analysis of Sr | Perera, I K.,Lyon I C., van Lierde P., and Turner G | International Journal of Mass Spectrometry and Ion Processes | 132 | 225-238 | 1994 | |
| ToF-SIMS Analysis of Interplanetary Dust | Stephan-T Jessberger-EK Klock-W Rulle-H Zehnpfenning-J | EARTH & PLANETARY SCI. LETT | 128 (3-4) | 453-467 | 1994 | ||
| INAA, IDMS and SIMS comparative REE investigations of clinopyroxenes from mantle xenoliths with different textures | Vannucci, R.; Ottolini, L.; Bottazzi, P.; Downes, H. | Isotope geoscience | 118, Number 1/4 | 85 | 1994 | ||
| Secondary ion mass spectroscopy (SIMS) in the analysis of elemental micropatterns in tree rings | Martin, R. R.; Sylvester, T.; Biesinger, M. C. | Canadian journal of forest research | 24, Number 11 | 2312 | 1994 | ||
| Determination of Sub-Parts per Billion Boron Contamination in N0+ Czochralski Silicon Substrates by SIMS | Chu, P. K.; Bleiler, R. J.; Metz, J. M. | Journal of the Electrochemical Society | 141, Number 12 | 3453 | 1994 | ||
| ######## | High precision oxygen isotope ratio measurements using an Isolab 54 ion microprobe | Saxton J M, Lyon I C and Turner G | Analyst | 120 | 1321-1326 | 1995 | |
| ######## | Reproducibility and precision of oxygen isotope measurements on geological materials using the Isolab 54 ion microprobe | Lyon I C, Saxton J M, Chatzitheodoridis E, McKeever P and van Lierde P | International Journal of Mass Spectrometry and Ion Processes | 151 | 16-Jan | 1995 | |
| ######## | Sr diffusion kinetics in amphiboles and significance to thermal histroy determinations | Brabander D. J. and Giletti B. J. | Geochimica et Cosmochimica Acta | 59 | 2223-2238 | 1995 | |
| ######## | Solute Segregation to Grain Boundaries in MgO-Doped Alumina | Soni, K.K.; Thompson, A. M.; Harmer. M.P.; Williams, D.B.; Chabala, J. M. and Levi-Setti, R. | Appl. Phys. Lett. | 66 | 2795-2797 | 1995 | |
| ######## | Photographic Gelatin Layers: Microstructural Information from Imaging SIMS | Chabala, J.M.; Levi-Setti, R.; and Maternaghan, T.J. | J. Imaging Sci. | 39 | 222-232 | 1995 | |
| ######## | Effects of Aluminum on Bone Surface Ion Composition | Bushinsky, D.A.; Sprague, S. M.; Hallegot, P.; Girod, C.; Chabala, J. M.; and Levi-Setti, | J. Bone and Mineral Research | 10 | 1988-1997 | 1995 | |
| 4/15/1997 | MOCVD, MBE, HJFET, Interfaces | Differences in Epitaxial-Layer/Substrate Interface properties of hetero-junction Field Effect Transistors fabricated by Molecular Beam Epitaxy and Metal Organic Chemical Vapor Deposition | Kasahara, K.; Kunihiro, K.; Nishizawa, H.; Ohno, Y. | Solid State Electronics | 38, No. 6 | 1221-1226 | 1995 |
| 4/15/1997 | hgCdTe, Impurity doped, minority carrier lifetime | Minority carrier Lifetime in Indium-Doped HgCdTe(211)B | Wijewarnasuriya, P.S. | Journal of electronic materials | 24 | 545-549 | 1995 |
| 4/6/2001 | Fluence, Flux, Current and Current Density Measurement in Faraday Cups for Surface Analysis | I S Gilmore and M P Seah | Surface and Interface Analysis | 23 | 248-258 | 1995 | |
| Distribution of dissolved and particulate 230Th and 232 Th inseawater from the Gulf of Mexico and off Cape Hatteras asmeasured by SIMS | Guo, L; Santschi, P H; Baskaran, M; Zindler, A | Earth and planetary science letters | 133 (3-4) | 117 | 1995 | ||
| SIMS methods in reactivity studies on metal oxides | Daolio, S; Facchin, B; Pagura, C; Battisti, A De; Gelosi, S | Inorganica chimica acta | 235 (1-2) | 381 | 1995 | ||
| Detection of 2-chloroethyl ethyl sulfide and sulfonium ion degradation products on environmental surfaces using static SIMS. | Groenewold, Gary S; Ingram, Jani C; Appelhans, Anthony D; Delmore, James E; Dahl, David A | Environmental science & technology | 29, Number 8 | 2107 | 1995 | ||
| A graphical analysis of transient response curves at an early stage in SIMS depth profiling using a 133Cs+ beam | Tomizuka, H; Ayame, A | Applied surface science | 89, Number 3 | 281 | 1995 | ||
| High-resolution chemical imaging with scanning ion probe SIMS | Chabala, J M; Soni, K K; Li, J; Gavrilov, K L; Levi-Setti, R | International journal of mass spectrometry and ion processes | 143 | 191 | 1995 | ||
| SIMS imaging of paper surfaces. Part 4. The detection of desizing agents on hard-to-size paper surfaces | Brinen, J S; Kulick, R J | International journal of mass spectrometry and ion processes | 143 | 177 | 1995 | ||
| SIMS quantification in Si, GaAs, and diamond - An update | Wilson, R G | International journal of mass spectrometry and ion processes | 143 | 43 | 1995 | ||
| Small-area depth profiling in a quadrupole based SIMS instrument | Wittmaack, K | International journal of mass spectrometry and ion processes | 143 | 19 | 1995 | ||
| On the SIMS depth profiling analysis: Reduction of matrix effect | Gao, Y; Marie, Y; Saldi, F; Migeon, H N | International journal of mass spectrometry and ion processes | 143 | 11 | 1995 | ||
| Stone-age mass spectrometry: The beginnings of "SIMS" at RCA Laboratories, Princeton | Honig, R E | International journal of mass spectrometry and ion processes | 143 | 1 | 1995 | ||
| Imaging SIMS for the investigation of substrate surfaces for CVD diamond deposition | Steiner, R; Stingeder, G; Hutter, H; Grasserbauer, M; Haubner, R; Lux, B | Fresenius' journal of analytical chemistry | 352, Number 3-4 | 313 | 1995 | ||
| Using SIMS to detect contamination sources from ion implanters | Stevie, F A; Wilson, R G; Simons, D S; Current, M I; Zalm, P C | Solid state technology | 38, Number 5 | 51 | 1995 | ||
| A SIMS method for 10Be/9Be ratio measurement in environmental materials | Belshaw, N S; O'Nions, R K; Blanckenburg, F von | International journal of mass spectrometry and ion processes | 142, Number 1-2 | 55 | 1995 | ||
| Use of Zr0- Secondary Ion Energy Distributions and Factor Analysis to Construct Chemical-state Depth Profiles in SIMS | Splinter, S. J.; Van der Heide, P. A. W.; Lin, A.; McIntyre, N. S. | Surface and interface analysis | 23, Number 9 | 573 | 1995 | ||
| Longitudinal and transverse moments of the distribution of MeV Ti ions implanted in Si measured by SIMS | Wang, K.-M.; Qu, B.-D.; Shi, B.-R.; Zhai, H.-Y. | Journal of physics D: applied physics | 28, Number 6 | 1158 | 1995 | ||
| Direct vizualization of a vast cortical calcium compartment in Paramecium by secondary ion mass spectrometry (SIMS) microscopy: possible involvement in exocytosis | Stelly, N.; Halpern, S.; Nicolas, G.; Fragu, P. | Journal of cell science | 108, Number 5 | 1895 | 1995 | ||
| Oxygen enhanced secondary ion emission of Fe and Co by TOF-SIMS and LSS/DR | Lee, J.C.; Kang, H.J.; Kim, K.J.; Kim, Y.S.; Moon, D.W. | Surface Science | 324, no.2-3 | 338-44 | 1995 | ||
| Characterization of plasma-deposited styrene films by XPSand static SIMS | Leggett, G.J.; Ratner, B.D.; Vickerman, J.C. | Surface and Interface Analysis | 23 | 22-8 | 1995 | ||
| Influence of the Cs concentration on the formation of MCs+ in SIMS analysis | Marie, Y.; Gao, Y.; Saldi, F.; Migeon, H.N. | Surface and Interface Analysis | 23 | 38-43 | 1995 | ||
| Sample charging during static SIMS studies of polymers | Leggett, G.J.; Vickerman, J.C. | Applied Surface Science | 84 | 253-66 | 1995 | ||
| Distribution analyses of pharmacologically relevant highmolecular compounds using secondary ion mass spectrometry (SIMS) | Trapp, M.; Stahl, H. | Journal of Molecular Structure | 348 | 397-9 | 1995 | ||
| An 18O-SIMS study of oxide growth on nickel modifiedwith Ce implants and CeO2coatings | Czerwinski, F.; Sproule, G.I.; Graham, M.J.; Smeltzer, W.W | Corrosion Science | 37 | 541-546 | 1995 | ||
| SIMS microprofiles of Pb-5%Sn solder joints in electronicdevices after accelerated life tests | Scandurra, A.; Porto, A.; Puglisi, O. | Applied Surface Science | 89, no.1 | 1-10 | 1995 | ||
| X-ray electrono-optical and SIMS characterization of Si crystals implanted with Bi ions before and after rapid thermal annealing | Auleytner, J.; Adamczewska, J.; Barcz, A.; Gorecka, J.; Reginski, K. | Crystal Research and Technology | 30, no.1 | 129-33 | 1995 | ||
| A study of the composition distribution at the Ti/Al2O3 interface using the MCs+ SIMS technique | Xin Chen; Youxiang Wang | Applied Surface Science | 89, no.2 | 169-73 | 1995 | ||
| Longitudinal and transverse moments of the distribution ofMeV Ti ions implanted in Si measured by SIMS | Ke-Ming Wang; Bao-Dong Qu; Bo-Rong Shi; Hong-Ying Zhai; Shi-Jie Ma; Tian-Bing Xu; Pei-Ran Zhu; Qing-Tai Zhao | Journal of Physics D (Applied Physics) | 28, no.6 | 1158-61 | 1995 | ||
| Static SIMS: surface charge stabilization of insulators for highly repeatable spectra when using a quadrupole mass spectrometer | Gilmore, I.S.; Seah, M.P | Surface and Interface Analysis | 23 | 191-203 | 1995 | ||
| XPS and SIMS studies of MBE-grown CdTe/InSb(001) heterostructures | Wee, A.T.S.; Feng, Z.C.; Hng, H.H.; Tan, K.L.; Farrow, R.F.C.; Choyke, W.J. | Journal of Physics: Condensed Matter | 7, no.23 | 4359-69 | 1995 | ||
| Surface studies on uranium monocarbide using XPS and SIMS | Asuvathraman, R.; Rajagopalan, S.; Ananthasivan, K.; Mathews, C.K.; Mallya, R.M. | Journal of Nuclear Materials | 224, no.1 | 25-30 | 1995 | ||
| Studies of polyisobutylene using time-of-flight secondaryion mass spectrometry (TOF-SIMS) | Keyang Xu; Proctor, A.; Hercules, D.M. | International Journal of Mass Spectrometry and Ion Processes | 143 | 113-29 | 1995 | ||
| SIMS study of deuterium trapping and migration in a YBa2Cu3O7- delta thin film | Yupu Li; Kilner, J.A.; Tate, T.J.; Lee, M.J.; Li, Y.H.; Quincey, P.G. | Nucl. Instrum. Methods Phys. Res. B | B99, no.1-4 | 627-31 | 1995 | ||
| Time-of-flight secondary ion mass spectrometry (ToF-SIMS) study of SP6 and SF6-CF4 plasma-treated low-density polyethylene films | Leonard, D.; Bertrand, P.; Khairallah-Abdelnour, Y.; Arefi- Khonsari, F.; Amouroux, J. | Surface and Interface Analysis | 23, no.7 | 1995 | |||
| SIMS: technique and studies on implanted surfaces | Krishan, K.; Tyagi, A.K. | Indian Journal of Pure and Applied Physics | 33, no.9 | 541-8 | 1995 | ||
| Oxidation mechanisms of beta -NiAl+Zr determined by SIMS | Prescott, R.; Mitchell, D.F.; Graham, M.J.; Doychak, J. | Corrosion Science | 37, no.9 | 1341-64 | 1995 | ||
| A newly developed chemical bevelling technique used for depth independent high depth resolution SIMS analysis | Hsu, C.M.; McPhail, D.S. | Nuclear Instruments & Methods in Physics Research, Section B | B101, no.4 | 427-34 | 1995 | ||
| Reactive ion sputter depth profiling of tantalum oxides: a comparative study using ToF-SIMS and Laser-SNMS | Franzreb, K.; Mathieu, H.J.; Landolt, D. | Surface and Interface Analysis | 23, no.9 | 641-51 | 1995 | ||
| SIMS analysis of Al delta -doped GaAs test structures using chemical bevelling as a sample preparation technique | Hsu, C.M.; Sharma, V.K.M.; Ashwin, M.J.; McPhail, D.S. | Surface and Interface Analysis | 23, no.10 | 665-72 | 1995 | ||
| Ion yield effects in the SIMS analysis of silicon delta- doped layers in GaAs | Sharma, V.K.M.; McPhail, D.S.; Fahy, M.R. | Surface and Interface Analysis | 23, no.10 | 723-8 | 1995 | ||
| Deconvolution of narrow boron SIMS depth profiles in Si and SiGe | Herzel, F.; Ehwald, K.-E.; Heinemann, B.; Kruger, D.; Kurps, R.; Ropke, W.; Zeindl, H.-P | Surface and Interface Analysis | 23, no.11 | 764-70 | 1995 | ||
| SIMS studies of the corrosion of zirconium | Tapping, R.L.; Chan, P.K.; Norton, P.R.; Zhang, C.-S. Syst. | International Journal of Mass Spectrometry and Ion Processes | 146-147 | 75-89 | 1995 | ||
| Self-diffusion of Ni in single and polycrystals of Ni3Al. A study of SIMS and radiotracer analysis | Frank, S.; Soedervall, U.; Herzig, C. | Physica Status Solidi B | 191, no.1 | 45-55 | 1995 | ||
| Local quantitative SIMS analysis of small amount of oxygen in titanium | Takeshita, H.T.; Tomii, Y.; Suzuki, R.O.; Ono, K. | Journal of the Japan Institute of Metals | 59, no.9 | 973-7 | 1995 | ||
| A combined approach: isotopic exposure/SIMS analysis/SEM to study the early stages of oxidation of beta -NiAl at 1473 K | Jedlinski, J.; Bernasik, A.; Graham, M.J.; Mitchell, D.F.; Sproule, G.I.; Borchardt, G. | Materials and Corrosion | 46, no.5 | 297-305 | 1995 | ||
| Ultra shallow doping profiling with SIMS | Zalm, P.C. | Reports on Progress in Physics | 58, no.10 | 1321-74 | 1995 | ||
| 8/13/1996 | A correlative study of the measurement of protein adsorption to steel, glass, polypropylene, and silicone surfaces using ToF-SIMS and dynamic contact angle analyses | Davies, J.; Nunnerley, C.S.; Paul, A.J. | Colloids and Surfaces B (Biointerfaces) | 6, no.3 | 181-90 | 1996 | |
| 8/14/1996 | SIMS study on redistribution of implanted impurities in InSb and InAs during post-implantation annealing | Gerasimenko, N.N.; Khryashchev, G.S.; Kuryshev, G.L.; Myasnikov, A.M.; Obodnikov, V.I. | Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with Materials and Atoms) | 111, no.3-4 | 281-4 | 1996 | |
| 8/14/1996 | Combination of EBSP measurements and SIMS to study crystallographic orientation dependence of diffusivities in a polycrystalline material: oxygen tracer diffusion inLa/sub 2-x/Sr/sub x/CuO/sub 4+or- delta / | Claus, J.; Borchardt, G.; Weber, S.; Hiver, J.M.; Scherrer, S. | Materials Science & Engineering B (Solid-State Materials for Advanced Technology) | B38, no.3 | 251-7 | 1996 | |
| 8/14/1996 | Reaction induced surface segregation in amorphous CuZr, NiZr and PdZr alloys-an XPS and SIMS depth profiling study | Kilo, M.; Hund, M.; Sauer, G.; Baiker, A.; Wokaun, A | Journal of Alloys and Compounds | 236, no.1-2 | 137-50 | 1996 | |
| 8/14/1996 | Nitrogen implantation into amorphous carbon films: SIMS and positron annihilation analyses | Freire, F.L., Jr.; Franceschini, D.F.; Achete, C.A.; Baumvol, I.J.R.; Brusa, R.S.; Mariotto, G.; Canteri, R. | Brazilian Journal of Physics | 26, no.1 | 353-8 | 1996 | |
| 8/14/1996 | SIMS-ETAAS characterisation of background impurities in CdZnTe bulk samples | Gerardi, C.; Milella, E.; Campanella, F.; Bernardi, S. | Mater. Sci. Forum (Switzerland), Materials Science Forum | 203 | 273-8 | 1996 | |
| 8/14/1996 | High-resolution SIMS and analytical TEM evaluation of alumina scales on beta -NiAl containing Zr or Y | Schumann, E.; Yang, J.C.; Ruhle, M.; Graham, M.J. | Oxidation of Metals | 46, no.1-2 | 37-49 | 1996 | |
| 8/14/1996 | Quantitative SIMS analysis of Mo in Ti-dilute Mo alloys using isotopic | Sudo, Y.; Takeshita, H.T.; Suzuki, R.O.; Tomii, Y.; Ono, K. | Journal of the Japan Institute of Metals | 60, no.4 | 406-11 | 1996 | |
| 8/14/1996 | Secondary-ion mass spectroscopy (SIMS) investigations of and Si incorporation in GaN grown by molecular beam epitaxy (MBE) | Cheng, T.S.; Foxon, C.T.; Jenkins, L.C.; Hooper, S.E.; Lacklison, D.E.; Orton, J.W.; Ber, B.Ya.; Merkulov, A.V.; Novikov, S.V. | Semiconductor Science and Technology | 11, no.4 | 538-41 | 1996 | |
| 8/14/1996 | Quantitative SIMS analysis of trace metallic impurities in high purity copper | Takeshita, H.T.; Kagawa, T.; Suzuki, R.O.; Oishi, T.; Ono, K. | Journal of the Japan Institute of Metals | 60, no.3 | 290-4 | 1996 | |
| 8/14/1996 | A SIMS study on secondary ion formation during low-energy methyl ion beam deposition | Ohno, H.; Aoki, Y.; Nagai, S. | Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with Materials and Atoms) | B108, no.1-2 | 75-80 | 1996 | |
| 8/14/1996 | Analyses of HF/NH/sub 4/F buffer-treated Si(111) surfaces using XPS, REM and SIMS | Ma, Y.; Eades, J.A. | Applied Physics A (Materials Science Processing) | A62, no.3 | 247-53 | 1996 | |
| 8/14/1996 | A combined SIMS-ISS study of the high-T/sub c/ superconducting compound YBa/sub 2/Cu/sub 3-y/Al/sub y/O/sub x/ | Chenakin, S.P.; Cherepin, V.T.; Panichkin, I.Yu.; Pivovarov, A.L. | Applied Physics A (Materials Science Processing) | A62, no.2 | 175-80 | 1996 | |
| 8/14/1996 | Ion implantation and secondary ion mass spectrometry of compound semiconductors | Wilson, R.G. | Solid-State Electronics | 39, no.8 | 1113-25 | 1996 | |
| 8/14/1996 | Investigations of the incorporation of B, P and N into CVD-diamond films by secondary ion mass spectrometry | Spicka, H.; Griesser, M.; Hutter, H.; Grasserbauer, M.; Bohr, S.; Haubner, R.; Lux, B. | Diam. Relat. Mater. (Switzerland), Diamond and Related Materials | 5, no.3-5 | 383-7 | 1996 | |
| 8/14/1996 | Thickness measurements of thin anodic oxides on GaAs using atomic force microscopy, profilometry, and secondary ion mass spectrometry | Schmuki, P.; Buchanan, M.; Mason, B.F.; Sproule, G.I.; Graham, M.J. | Applied Physics Letters | 68, no.19 | 2675-7 | 1996 | |
| 8/14/1996 | Analysis of surface particles by time-of-flight secondary ion mass spectrometry | Chu, P.K.; Odom, R.W.; Reich, D.F. | Materials Chemistry and Physics | 43, no.2 | 87-94 | 1996 | |
| 8/14/1996 | The influence of the surface binding energy on the emission of MCs/sup +/ secondary ions from elemental targets in secondary ion mass spectrometry | Mootz, T.; Adams, F. | International Journal of Mass Spectrometry and Ion Processes | 152, no.2-3 | 209-16 | 1996 | |
| 8/14/1996 | Improved sensitivity and depth resolution for analyses of shallow p-n junctions in silicon with secondary ion mass spectrometry | Erickson, J.W.; Brigham, R. | J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. (USA), Journal of Vacuum Science & Technology B (Microelectronics a | 14, no.1 | 353-7 | 1996 | |
| 8/14/1996 | Two-dimensional profiling of large tilt angle, low energy boron implanted structure using secondary-ion mass spectrometry | Cooke, G.A.; Pearson, P.; Gibbons, R.; Dowsett, M.G.; Hill, C. | J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. (USA), Journal of Vacuum Science & Technology B (Microelectronics a | 14, no.1 | 348-52 | 1996 | |
| 8/14/1996 | Surface metal contamination during ion implantation: comparison of measurements by secondary ion mass spectroscopy, total reflection X-ray fluorescence spectrometry, and vapor phase decomposition used in conjunction with graphite furnace atomic absorption spectrometry and inductively coupled plasma mass spectrometry | Frost, M.R.; Harrington, W.L.; Downey, D.F.; Walther, S.R. | J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. (USA), Journal of Vacuum Science & Technology B (Microelectronics a | 14, no.1 | 329-35 | 1996 | |
| 8/14/1996 | Accurate secondary ion mass spectrometry analysis of shallow doping profiles in Si based on the internal standard method | Liu, G.L.; Uchida, H.; Aikawa, I.; Kuroda, S.; Hirashita, N. | J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. (USA), Journal of Vacuum Science & Technology B (Microelectronics a | 14, no.1 | 324-8 | 1996 | |
| 8/14/1996 | Depth profiling of B through silicide on silicon structures, using secondary ion-mass spectrometry and resonant postionization mass spectrometry | De Bisschop, P.; Gomez, J.; Geenen, L.; Vandervorst, W. | J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct.(USA), Journal of Vacuum Science & Technology B (Microelectronics a | 14, no.1 | 311-23 | 1996 | |
| 8/14/1996 | Experimental investigation of the increase in depth resolution obtained through the use of maximum entropy deconvolution of secondary ion mass spectrometry depth profiles | Cooke, G.A.; Dowsett, M.G.; Phillips, P. | J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. (USA), Journal of Vacuum Science & Technology B (Microelectronics a | 14, no.1 | 283-6 | 1996 | |
| 8/14/1996 | Oxygen impurities at the homoepitaxially grown diamond-substrate interface analyzed by secondary ion mass spectrometry | Ando, T.; Haneda, H.; Akaishi, M.; Sato, Y.; Kamo, M. | Diamond and Related Materials | 5, no.1 | 34-7 | 1996 | |
| 8/14/1996 | Secondary ion mass spectrometry studies on the formation of the valve metal oxide in ruthenium- and iridium-based mixed oxide electrodes | Daolio, S.; Kristof, J.; Piccirillo, C.; Facchin, B.; Pagura, C. | International Journal of Mass Spectrometry and Ion Processes | 152, no.1 | 87-96 | 1996 | |
| 8/14/1996 | Study of CdTe/CdS-thin films by isotope dilution, neutron activation analysis, inductively coupled plasma mass spectrometry and secondary ion mass spectrometry | Rosenberg, R.J.; Zilliacus, R.; Lakomaa, E.L.; Rautiainen, A.; Maekelae, A. | Fresenius` Journal of Analytical Chemistry | 354, no.1 | 10-Jun | 1996 | |
| 9/13/1996 | Surface morphology of a PVC/PMMA blend studied by ToF-SIMS | Briggs, D.; Fletcher, I.W.; Reichlmaier, S.; Agulo-Sanchez, J.L.; Short, R.D. | Surface and Interface Analysis | 24, no.6 | 419-21 | 1996 | |
| 9/13/1996 | Sputtering yield changes, surface movement and apparent profile shifts in SIMS depth analyses of silicon using oxygen primary ions | Wittmaak, K. | Surface and Interface Analysis | 24, no.6 | 389-98 | 1996 | |
| 9/13/1996 | SIMS characterization of thin layers of Ir and its silicides | Blanco, J.M.; Serrano, J.J.; Jimenez-Leube, J.; Rodriguez, T.; Aguilar, M.; Gwilliam, R. | Nucl. Instrum. Methods Phys. Res. B | 113, no.1-4 | 530-3 | 1996 | |
| 9/13/1996 | Hydrogen desorption from copper during ion bombardment measured by SIMS | Nagai, Y.; Saito, Y.; Matuda, N. | Vacuum | 47, no.6-8 | 737-9 | 1996 | |
| 9/13/1996 | Study of the heavy metal gettering effect of porous silicon on SOI structure | Wang, X.H.; Huang, Y.P.; Bao, Z.M.; Tang, T.A.; Li, A.Z.; Zou,S.X. | Conference Title: 1995 4th International Conference on Solid-State and Integrated Circuit Technology. Proceedings | 571-3 | 1996 | ||
| ######## | Surface roughening at the ZnTe/GaAs interface in stationary and sample rotation SIMS depth profiling | Konarski, P.; Hautala, M. | Vacuum | 47, no.9 | 1111-15 | 1996 | |
| ######## | High depth resolution depth profiling of metal films using SIMS and sample rotation | Sykes, D.E; Chew, A.; Hems, J.; Stribley, K. | Applied Surface Science | 100-101 | 77-83 | 1996 | |
| ######## | SIMS depth profiling of delta-doped layers in silicon | Smirnov, V.K.; Simakin, S.G.; Potapov, E.V.; Makarov, V.V. | Surface and Interface Analysis | 24, no.7 | 469-75 | 1996 | |
| ######## | Comparison of submicron particle analysis by Auger electron spectroscopy, time-of-flight secondary ion mass spectrometry, and secondary electron microscopy with energy dispersive X-ray spectroscopy [IC yield] | Childs, K.D.; Narum, A.D.; LaVanier, L.A.; Lindley, P.M.; Schueler, B.W.; Mulholland, G.; Diebold, A.C. | Journal of Vacuum Science & Technology A (Vacuum, Surfaces, and Films) | 14, no.4 | 2392-404 | 1996 | |
| ######## | Relative sensitivity factors of B related to SiGe alloy composition on secondary ion mass spectrometry with an oxygen primary ion beam | Fujinaga, K. | Journal of Vacuum Science & Technology A (Vacuum, Surfaces, and Films) | 14, no.4 | 2361-5 | 1996 | |
| ######## | TEM and SIMS characterization of high V/sub cb/(F) power transistor wafers | Ai, R.; Anderson, T.; Schoenberg, M. | ISTFA '95. 21st International Symposium for Testing and Failure Analysis | 155-8 | 1996 | ||
| ######## | Visualization of a buried organic interface by imaging time- of-flight secondary ion mass spectrometry and scanning Auger microprobe of an ion-beam crater edge | Schamberger, P.C.; Jones, G.L.; Gardella, J.A., Jr.; McKeown, P.J ; Davis, L.E. | Journal of Vacuum Science & Technology A (Vacuum, Surfaces, and Films), | 14, no.4 | 2289-302 | 1996 | |
| ######## | Fragmentation of cluster ions in SIMS: cluster distributions over lifetime, excitation energy and kinetic energy release | Dzhemilev, N.Kh.; Goldenberg, A.M.; Veriovkin, I.V.; Verkhoturov, S.V. | Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with Materials and Atoms), | 114, no.3-4 | 245-51 | 1996 | |
| ######## | Secondary ion emission from Langmuir-Blodgett (LB) films investigated by time-of-flight secondary ion mass spectrometry | Kudo, M.; Yamada, S.; Yoshida, S.; Watanabe, T.; Hoshi, T. | Applied Surface Science, | 100-101 | 129-33 | 1996 | |
| ######## | De-noising of SIMS images via wavelet shrinkage | Nilolov, S.G.; Hutter, H.; Grasserbauer, M. | Chemometrics and Intelligent Laboratory Systems | 34, no.2 | 263-73 | 1996 | |
| ######## | Comparison of MOCVD and MBE semiconductor superlattices for the evaluation of depth resolution in AES and SIMS | Furuya, M.; Soga, M.; Takano, H. | Applied Surface Science, | 100-101 | 508-12 | 1996 | |
| ######## | Surfactant-mediated growth of SiGe/Si quantum-well structures studied by photoluminescence technique and secondary ion mass spectrometry | Nilsson, S.; Zeindl, H.P.; Kruger, D.; Klatt, J.; Kurps, R. | Evolution of Epitaxial Structure and Morphology. Symposium, | xv+561 | 197-202 | 1996 | |
| ######## | Advances in High Resolution SIMS Studies of BrdU-Labelled Human Metaphase Chromosomes | Levi-Setti, R.; Chabala, J.M.; Gavrilov. K.; Espinosa, R.; and LeBeau, M. M. | Cell. and Mol. Biology | 42 | 301-324 | 1996 | |
| ######## | Segregation Effects in SIMS profiling of impurities in silicon by low energy oxygen ions | Petravic M., Svensson B.G., Williams J.S. and Glasko J.M. | Nucl. Instrum. Meth. B | 118 | 151 | 1996 | |
| ######## | Oxidation-enhanced roughening of thin Co films during sputtering by O2+ ions | Mohadjeri B., Petravic M. and Svensson B.G. | J.Vac.Sci.Technol. A | 14 | 2192 | 1996 | |
| ######## | Deconvolution of SIMS depth profiles of boron in silicon | Gautier, B.; Prost, R.; Proudon, G.; and Dupuy, J. C. | Surface and Interface Analysis | 24, no.11 | 733 | 1996 | |
| ######## | High oxygen and carbon contents in GaAs epilayers grown below a critical temperature by molecular beam epitaxy. | Goo, C.H. , et. al | Appl. Phys. Lett | 68 | 841 | 1996 | |
| ######## | Differences in Epitaxial-Layer/Substrate Interface properties of hetero-junction Field Effect Transistors fabricated by Molecular Beam Epitaxy and Metal Organic Chemical Vapor Deposition | Kashara, K.; Kunihiro, K.; Nishizawa, H.; and Ohno, Y. | Solid State Electronics | 38, No. 6 | 1221-1226 | 1996 | |
| ######## | Dopant-induced lattice dilation in n-type InP homoepitaxial layers. | Ferrari, C. and Franzosi P. | Journal of Applied Physics | 79 | 6890 | 1996 | |
| ######## | Characterization of nitrided SiO/sub 2/ thin films using secondary ion mass spectrometry | Frost, M.R.; Magee, C.W. | Appl. Surf. Sci. (Netherlands), Applied Surface Science | 104-105 | 379-84 | 1996 | |
| ######## | Characterization of the noise in secondary ion mass spectrometry depth profiles | Chu, D.P.; Dowsett, M.G.; Cooke, G.A. | Journal of Applied Physics | 80, no.12 | 7104-7 | 1996 | |
| ######## | Secondary ion mass spectrometry and optical characterization of ion exchanged waveguides subjected to thermal annealing | Ciminelli, C.; Cururachi, S.; De Sario, M.; Gerardi, C. | MELECON '96 Proceedings | xxxiv+1744 | 693-6 | 1996 | |
| ######## | Study of the microstructure of IC interconnect metallisations using analytical transmission electron microscopy and secondary ion mass spectrometry | Cosemans, P.; D'Olieslaeger, M.; De Ceuninck, W.; De Schepper, L.; Stals, L. | Microelectron. Reliab. (UK), Microelectronics and Reliability | 36, no.11-12 | 1699-702 | 1996 | |
| ######## | XRD, XPS and SIMS investigations on electrodeposited nickel-phosphorous alloy coatings | Haseeb, A.S.M.A.; Chakraborty, P.; Ahmed, I.; Caccavale, F.; Bertoncello, R. | Thin Solid Films | 283, no.1-2 | 140-4 | 1996 | |
| ######## | Towards a 3D characterization of solids by MCs/sup +/ SIMS | Gnaser, H. | Surface and Interface Analysis | 24, no.8 | 483-9 | 1996 | |
| ######## | SIMS characterization of HgCdTe and related II-VI compounds | Sheng, J.; Wang, L.; Lux, G.E. | J. Electron. Mater. (USA), Journal of Electronic Materials | 25, no.8 | 1165-71 | 1996 | |
| ######## | Ion etching effects at interfaces of semiconductor III-V/III-V and II-VI/III-V heterostructures in SIMS depth profiling | Konarski, P.; Herman, M.A.; Kozhukhov, A.V. | Electron Technol. (Poland), Electron Technology | 29, no.2-3 | 277-82 | 1996 | |
| 1/17/1997 | High-precision characterization of III-nitride semiconductor alloys with secondary ion mass spectrometry (SIMS) | Erickson, J.W.; Ga, Y.; Wilson, R.G. | Gallium Nitride and Related Materials-First International Symposium | xxi+970, 363-8 | 1996 | ||
| 1/17/1997 | Ion etching effects occurring in secondary ion mass spectrometry depth profiling of InGaAs/InP and InGaAs/AlAs/InP MBE grown heterostructures | Kozhukhov, A.V.; Konarski, P.; Herman, M.A. | Acta Phys. Pol. A (Poland) | 90, no. 5 | 869-70 | 1996 | |
| 1/17/1997 | Photoluminescence and SIMS studies of hydrogen passivation of Mg-doped p-type gallium nitride | Li, Y.; Lu, Y.; Shen, H.; Wraback, M.; Hwang, C.Y.; Schurman, M.; Mayo, W.; Salagaj, T., Stall, R.A | Gallium Nitride and Related Materials-First International Symposium | xxi+970, 363-8 | 1996 | ||
| 1/17/1997 | Static SIMS: a study of damage using polymers | Gilmore, S.; Seah, M.P. | Surface and Interface Analysis | 24, no.11 | 746-62 | 1996 | |
| 2/17/1997 | Surface Roughness-Induces Artifacts in Secondary Ion Mass Spectrometry Depth Profiling and a Simple Technique to Smooth the Surface | Herner, S.B.; Gila, B.P.; Jones, K.S.; Gossman, H.J.; Poate, J. M.; Luftman, H.S. | Journal of Vacuum Science and Technology B (Microelectronics and Nanometer Structures) | 14 | 3593-5 | 1996 | |
| 2/17/1997 | Secondary Ion Mass Spectrometry and X-ray Photo-electron Spectroscopy Analysis of Alpha-Irradiated Bi-2212 Superconductors | Bhattacharyay, A.; Rajasekar, P.; Chakraborty, P.; Bandyopadhyays, S.K.; Barat, P.; Sen, P.; Caccavale, F.; Lo Russo, S.; Knystautas, E.; Adnot, A. | Journal of Physics D (Applied Physics) | 29, no. 11 | 2745-9 | 1996 | |
| 3/11/1997 | XPS and SIMS Surface Chemical Analysis of Some Important Classes of Polymeric Biomaterials | Sabbatini, L.; Zambonin, P.G. | Journal of Electron Spectroscopy and Related Phenomena | 81, no.3 | 285-301 | 1996 | |
| 3/11/1997 | Analysis of Reaction at Au/Si/sub 3N/sub 4/ Interface by XPS-SIMS | Nomura, K.; Kawai, S.; Shibata, N. | Journal of Ceramic Society of Japan | 104, no. 12 | 1167-70 | 1996 | |
| 3/11/1997 | Indentification of Trapping Sites in High-Strength Steels by Secondary Ion Mass Spectrometry for Thermally Desorbed Hydrogen | Takai, K.; Homma, Y.; Izutsu, K.; Nagumo, M. | Journal of the Japan Institute of Metals | 60, no. 12 | 1155-62 | 1996 | |
| 4/15/1997 | Surface Metal Contamination on Silicon Wafers Measured by Surface SIMS | Smith, S.P.; Hitzaman, C.J.; Hockett, R.S. | Proceedings of the Fourth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing | 308-15 | 1996 | ||
| 4/15/1997 | Analysis of Submicron Aluminum and Alumina Particles by Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) | Lindley, P.M.; Schueler, B.W.; Dieblod, A.C.; Hockett, R.S.; Mulholland, G. | Proceedings of the Fourth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing | 518-25 | 1996 | ||
| 4/15/1997 | Surface SIMS Round Robin for Na, Al and K on Silicon Wafers | Hockett, R.S.; Diebold, A. | Proceedings of the Fourth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing | 500-7 | 1996 | ||
| 4/15/1997 | Time-of-flight SIMS and in-situ XPS study of O/sub 2/ and O/sub 2/-N/sub 2/ post-discharge microwave plasma-modified high-density polyethylene and hexatriacontane surfaces | Leonard, D.; Bertrand, P.; Scheuer, A.; Prat, R., Hommet, J.; Le Moigne, J.; Deville, J.P. | Journal of Adhesion Science and Technology | 10, no. 11 | 1165-97 | 1996 | |
| 4/15/1997 | Tribological Boron Concentration Profiles at Hard Steel Surfaces Studied by SIMS | Gudmand-Heyer, L.; Nielsen, G.T.; Morgan P. | Surface and Interface Analysis | 24, no. 13 | 856-62 | 1996 | |
| 4/15/1997 | Feasibility of analysis of silicon surface cleaning using time-of-flight secondary ion mass spectrometry | Hossain-Pas, S.D.; Pas, M.F.; Douglas, M.A. | Proceedings
of the Fourth International Symposium on Cleaning Technology in Semiconductor
Device Manufacturing |
508-17 | 1996 | ||
| 4/15/1997 | Imaging fibrinogen adsorbed on noble metal surfaces with scanning tunneling microscopy: correlation of images with electron spectroscopy for chemical analysis, secondary ion mass spectrometry, and radiolabeling studies | Lewis, K.B.; Ratner, B.D. | Colloids and Surfaces B (Biointerfaces) | 7, no. 5-6 | 259-69 | 1996 | |
| 4/15/1997 | Investigations on the MCs/sub 2//sup +/ formation in secondary ion mass spectrometry | Mootz, T.; Adriaens, A.; Adams, F. | International Journal of Mass Spectrometry and Ion Processes | 156, no. 1-2 | 10-Jan | 1996 | |
| 4/15/1997 | Interfaces, impurities. MBE | High oxygen and carbon contents in GaAs epilayers grown below a critical temperature by molecular beam epitaxy. | Goo, C.H. et. al | Appl. Phys. Lett | 68 | 841 | 1996 |
| 4/15/1997 | MOCVD, LPE, homoepitaxy. | Dopant-induced lattice dilation in n-type InP homoepitaxial layers. | Ferrari , C.; Franzosi, P. | Journal of Applied Physics | 79 | 6890 | 1996 |
| 4/15/1997 | dinamic range, current-frequency converter, wide-band amplifier | Registration System for an Ion Microprobe | Tolstogouzov, A., Mamontov, E. | Instruments and Experimental Techniques | 39 (5) | 723-726 | 1996 |
| 5/16/1997 | SIMS and MOKE studies of Fe-Gd multilayers on Si | Hsu, L.-S.; Lo, C.-K.; Yao, Y.-D.; Yang, C.-S. | Advanced Metallization for Future ULSI. Symposium | xii+597, 65-70 | 1996 | ||
| 6/13/1997 | SIMS measurement of the deuterium ion diffusion in SrCe/sub 0.95/Yb/sub 0.05/O/sub 3- delta / proton conductor | Morita, Y.; Yamazaki, Y. | Denki Kagaku | 64, no.9 | 1017-20 | 1996 | |
| 6/13/1997 | Quantification of metal trace contaminants on Si wafer surfaces by Laser-SNMS and TOF-SIMS using sputter deposited submonolayer standards | Schnieders, A.; Mollers, R.; Terhorst, M.; Cramer, H.-G.; Niehuis, E.; Benninghoven, A. | Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures) |
14, no.4 | 2712-24 | 1996 | |
| 6/13/1997 | Analytical method of gigabit trench doping uniformity by secondary ion mass spectrometry | Matsuo, N.; Tsukamoto, K.; Miyoshi, T. | Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures) |
14, no.4 | 2770-1 | 1996 | |
| 7/24/1997 | implantation, carbon, acceptors, GaAs | Co-implantation of carbon and group II acceptors in GaAs | Morton, R.; Lau, S.S.; Poker, D.B.; and Chu, P.K. | Applied Physics Letters | 68, no. 8 | 1135 | 1996 |
| 7/24/1997 | Reproducibility of SIMS, Silicon | Long Term Reproducibility of SIMS Measurements in Silicon | Chu, P.K.; Smith, S.P.; and Bleiler, R.J. | Journal of Vacuum Science & Technology B | 14, no. 5 | 3321 | 1996 |
| 2/18/1999 | Effect of electrolytic oxidation upon the surface chemistry of type A carbon fibres III- Chemical state, source, and location of surface nitrogen | M. R. Alexander and F. R. Jones | Carbon | 34 | 1093-1102 | 1996 | |
| 4/15/1997 | Sputtering investigation of boron nitride with secondary ion and secondary neutral mass spectrometry | Zhang, J.; Bhattacharjee, S.; Shutthanandan, V.; Ray, P.K. | Journal of Vacuum Science & Technology A (Vacuum, Surfaces, and Films) | 15, no. 2 | 243-7 | 1997 | |
| 4/15/1997 | Oxidation of silicon by low energy oxygen ions | Williams, J.S.; Short, K.T.; Petravic , M.; Svensson, B.G. | Nucl.Instr.and Meth. | B121 | 24 | 1997 | |
| 4/15/1997 | indicator mineral, garnet, diamond, trace element microanalysis | SIMS Microanalysis of Garnets from Yakutia Kimberlites | Tolstogouzov Alexander | European Microscopy and Analysis | Issue 46 | 17-18 | 1997 |
| 5/16/1997 | Binary codes derived from the Hoffman-Singleton and Higman-Sims graphs | Tonchev, V.D. |
IEEE Transactions on Information Theory |
43, no.3 |
1021-5 | 1997 | |
| 5/16/1997 | Influence of tacticity on polymer surfaces studied by ToF-SIMS | Vanden Eynde, X.; Weng, L.T.; Bertrand, P. | Surface and Interface Analysis | 25, no.1 | 41-5 | 1997 | |
| 5/16/1997 | Quantitative surface analysis of ethylene-propylene polymers using ToF-SIMS | Galuska, A.A. | Surface and Interface Analysis | 25, no.1 | 1-4 | 1997 | |
| 5/16/1997 | Investigation of ion bombarded polymer surfaces using SIMS, XPS and AFM | Lee, J.W.; Kim, T.H.; Kim, S.H.; Kim, C.Y.; Yoon, Y.H.; Lee, J.S.; Han, J.G. | Nucl. Instrum. Methods Phys. Res. B | 121, no.1-4 | 474-9 | 1997 | |
| 5/16/1997 | Behavior of gallium secondary ion intensity in gallium focused ion beam secondary ion mass spectrometry | Sakamoto, T.; Owari, I.; Nihei, Y. | Japanese Journal of Applied Physics, Part 1 | 36, no.3A | 1287-91 | 1997 | |
| 5/16/1997 | The Lateral range spread of MeV
phosphorus ions implanted in silicon measured by time-of-flight secondary ion
mass spectrometry |
Bo-Rong Shi; Cue, N.; Smith, T.L.; Tian-Bing Xu | Journal of Vacuum Science & Technology B | 15, no.2 | 273-6 | 1997 | |
| 6/13/1997 | Application of the SIMS method in studies of Cr segregation in Cr-Doped CoO. II. Depth profiles | Bernasik, A.; Nowotny, J.; Scherrer, S.; Weber, S. | Journal of the American Ceramic Society | 80, no.2 | 349-56 | 1997 | |
| 6/13/1997 | Application of the SIMS method in studies of Cr segregation in Cr-doped CoO. I. Aspects of quantitative analysis | Bernasik, A.; Nowotny, J.; Scherrer, S.; Weber, S. | Journal of the American Ceramic Society | 80, no.2 | 343-8 | 1997 | |
| 6/13/1997 | Accelerator SIMS at PSI/ETH Zurich | Ender, R.M.; Dobeli, M.; Suter, M.; Synal, H.-A. | Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with Materials and Atoms) |
123, no.1-4 | 575-8 | 1997 | |
| 6/13/1997 | Cs/sup +/ ion beam damage of poly(vinyl chloride) and poly(methyl methacrylate) studied by high mass resolution ToF-SIMS | Briggs, D.; Fletcher, I.W. | Surface and Interface Analysis | 25, no.3 | 167-76 | 1997 | |
| 6/13/1997 | Depth profiling by combined SIMS-ESDMS analysis: a new surface analytical technique | Seki, S.; Sumiya, H.; Muto, K.; Tamura, H. | Surface and Interface Analysis | 25, no.3 | 155-60 | 1997 | |
| 6/13/1997 | SIMS: Addressing the problem of heterogeneity in databases | Arens, Y. | Proc. SPIE - Int. Soc. Opt. Eng. (USA), Proceedings of the SPIE - The International Society for Optical Engineering | 2938 | 54-64 | 1997 | |
| 6/13/1997 | Influence of support material on
formation of electrocatalytic thin films-a secondary ion mass spectrometry study |
Piccirillo, C.; Daolio, S.;
Kristof, J.; Mihaly, J.; Facchin, B.; Fabrizio, M. |
International Journal of Mass Spectrometry and Ion Processes | 161, no.1-3 | 141-9 | 1997 | |
| 6/13/1997 | Static secondary ion mass spectrometry (SSIMS) of biological compounds in tissue and tissue-like matrices | John, C.M.; Odom, R.W | International Journal of Mass Spectrometry and Ion Processes | 161, no.1-3 | 47-67 | 1997 | |
| 7/15/1997 | XPS, XANES and ToF-SIMS characterization of reactively magnetron-sputtered carbon nitride films | Lopez, S.; Dunlop, H.M.; Benmalek, M.; Tourillon, G.; Wong, M.-S.; Sproul, W.D. | Surface and Interface Analysis | 25, no.5 | 315-23 | 1997 | |
| 7/15/1997 | High depth resolution SIMS analysis with low-energy grazing O/sub 2//sup +/ beams | Zhi-Xiong Jiang; Alkemade, P.F.A.; Algra, E.; Radelaar, S. | Surface and Interface Analysis | 25, no.4 | 285-91 | 1997 | |
| 7/15/1997 | The characterisation of bonded
silicon on insulator (BSOI) structures using low temperature scanning
cathodoluminescence (CL) and secondary ion mass spectrometry (SIMS) |
Williams, G.M.; Newey, J.P.; Nayar, V. | Microelectronic Engineering | 36, no.1-4 | 137-40 | 1997 | |
| 7/15/1997 | A SIMS and TEM investigation of Au/Ti/Pd solid state ohmic contacts on p-GaAs | Henry, B.M.; Staton-Bevan, A.E.; Sharma, V.K.M.; Crouch, M.A. | Applied Surface Science | 108, no.4 | 485-93 | 1997 | |
| 7/15/1997 | O/sub 3//sup +/ cluster primary ion bombardment for secondary ion mass spectrometry | Yamazaki, H.; Mitani, Y. | Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with Materials and Atoms) | 124, no.1 | 91-4 | 1997 | |
| 7/15/1997 | Influence of support material on formation of electrocatalytic thin films-a secondary ion mass spectrometry study | Piccirillo, C.; Daolio, S.;
Kristof, J.; Mihaly, J.; Facchin, B.; Fabrizio, M. |
International Journal of Mass Spectrometry and Ion Processes | 161, no.1-3 | 141-9 | 1997 | |
| 7/24/1997 | CdTe,semiconductors,SIMS,impurities, dopants | Impurities and dopants in vanadium doped CdTe | Gauneau, M.; Volle, R.; Martel, G.; Moisan, J.Y. | Optical Materials | 7 | 21-31 | 1997 |
| 7/24/1997 | coal, geology, SIMS | Application of imaging TOF-SIMS to the study of coal from Guidin, Guizhou Province, Southwest China | Hou, XQ; Ren, DY; Mao, HL; Jin, KL; Chu, PK; Reich, F; Wayne, DH | International Journal of Coal Geology | 27, no. 1 | 23 | 1997 |
| 7/24/1997 | SIMS | CdTe,semiconductors,SIMS,impurities, dopants | Chu, P.K. | Materials Chemistry and Physics | 38, no.3 | 203 | 1997 |
| 7/24/1997 | impurity gettering, ion implantation | Combined Impurity Gettering Effects of Helium-Induced Cavities and Oxygen Precipitates Created by Plasma Immersion Ion Implantation | Min, J; Chu, PK; Lu, X; Iyer, SSK; and Cheung, NW | Thin Solid Films | 300, no. 1-2 | 64 | 1997 |
| 7/24/1997 | deconvolution, boron, silicon, iterative algorithm, regularization, simulation | Effectiveness and limits of the deconvolution of SIMS depth profiles of boron in silicon | Gautier, B.; Dupuy, J.C.; Prost, R.; Prudon, G. | Surface and Interface Analysis | 25 | 464-477 | 1997 |
| 7/24/1997 | Tree rings, SIMS, metals | Metals in the annual rings of eastern white pine (Pinus strobus) in southwestern Ontario by secondary ion mass spectroscopy (SIMS) | Martin, R.R.; Zanin, J.P.; Bensette, M.J.; Lee, M.; Furimsky, E. | Canadian Journal of Forestry Research | 27 | 76-79 | 1997 |
| 7/24/1997 | electronic sputtering, highly charged ions, Coulomb explosion | Electronic sputtering of thin conductors by neutralization of slow highly charged ions | Schenkel, T; Briere, M. A.; Schmidt-Boecking, H.; Bethge, K.; D. Schneider | Physical Review Letters | 78 | 2481-2484 | 1997 |
| 1/14/1998 | SAM | Electron Beam Profile Imaging
with Self-Assembled Monolayers and Secondary Ion Mass Spectrometry |
Wight, S.; Gillen, G.; Herne, T. | Scanning | 19 | 72-74 | 1997 |
| 1/14/1998 | MeV ion sputtering of ploymers:observation of secondary ion emission dependence on the crystallinity of PEEK and PET films | Nsouli, B; Dole, P; Allali,H; Debre, O; Colombini,D; Thomas, JP | International Journal of Mass Spectrometry and Ion Processes | 164, no. 3 | 7L-15L | 1997 | |
| 1/14/1998 | Surface mass spectrometry of biotinylated self-assembled monolayers | Trevor, JL; Mencer, DE; Lykke, KR; Pellin, MJ; Hanley, L | Analytical Chemistry | 69, no. 21 | 4331-4338 | 1997 | |
| 1/14/1998 | Secondary ion emissions from fluorolubricants under several primary beam conditions by TOF-SIMS | Hoshi, T; Tozu, M; Oiwa, R; Zhaping, L; Kudo, M | Applied Surface Science | 121 | 146-151 | 1997 | |
| 1/14/1998 | ToF-SIMS analyses of polystyrene and dibenzanthracene:Evidence of the fragmentation and metastable decay processes in the molecular secondary ion emission | Delcorte, A; Segada, BG; Bertrand, P | Surface Science | 389, nos. 1-3 | 393-394 | 1997 | |
| 1/14/1998 | Time-of-Flight secondary ion mass spectrometry of NaBF4:A comparison of atomic and polyatomic primary ion at constant impact energy | Van Stipdonk, MJ; Harris, RD; Schweikert, EA | Rapid Communications in Mass Spectrometry | 11, no. 16 | 1794-1798 | 1997 | |
| 2/4/1998 | Identification of inorganic nitrogen in an Australian bituminous coal using x-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (TOFSIMS) | Bin Gong, Paul J. Pigram, Robert N. Lamb | International Journal of Coal Geology | V34 | 53-68 | 1997 | |
| 2/26/1998 | Improvement of a-Si:H Solar Cell Characteristics by means of a Boron-Carbon Window Layer | Y. Matsumoto, R.Asomoza, A. Merkulov, G. Hirata and L. Cota-Araiza | Jpn. J. Appl. Phys. | 36 | L467-L469 | 1997 | |
| 2/26/1998 | Production and Characterization of Carbon Nitride Thin Films Produced by a Graphite Hollow Cathode System | S. Muhl, A. Gaona-Couto, J.M. Mendez, S. Rodil, G. Gonzalez,A. Merkulov and R.Asomoza | Thin Solid Films | 308-309 | 228-232 | 1997 | |
| 4/17/1998 | Improved Determination of Matrix Composition of HgCdTe by SIMS | Sheng, J.; Wang, L., Lux, G. E.; Gao, Y. | Journal of Electronic Materials | 26, No.6 | 588-592 | 1997 | |
| 2/18/1999 | RF HMDSO plasma deposition: A comparison of plasma- and deposit-chemistry | M. R. Alexander, R. D. Short and F. R. Jones | Plasmas and Polymers | 2 | 277-300 | 1997 | |
| 2/18/1999 | Secondary ion mass spectrometry of polymers: a TOF SIMS study of monodispersed PMMA standards | A. M. Leeson, M. R. Alexander, R. D. Short, D. Briggs and M. J. Hearn | Surface and Interface Analysis | 25 | 261-274 | 1997 | |
| 3/12/1999 | Energy Transfer and Surface-Induced Dissociation for SiMe3+ Scattering off Clean and Adsorbate Covered Metals | S.B. Wainhaus, H. Lim, D.G. Schultz, and L. Hanley | Journal of Chemical Physics | 106 | 10329-10336 | 1997 | |
| 3/12/1999 | Classical Dynamics Simulations of SiMe3+ Ion-Surface Scattering | D.G. Schultz, S.B. Wainhaus, L. Hanley, P. de Sainte Claire, and W.L. Hase | Journal of Chemical Physics | 106 | 10337-10353 | 1997 | |
| 3/12/1999 | Surface Energy Transfer by Low Energy Polyatomic Ion Collisions | L. Hanley, H. Lim, D.G. Schultz, S.B. Wainhaus, P. de Sainte Claire, and W.L. Hase | Nuclear Instruments and Methods in Physics Research B | 125 | 218-222 | 1997 | |
| 4/26/1999 | Influence of Polymer Tacticity on Surface studied by ToF-SIMS | X. Vanden Eynde, LT. Weng, P. Bertrand | Surface and Interface Analysis | 25 | 41-45 | 1997 | |
| 4/26/1999 | ToF-SIMS Quantification of Polystyrene Spectra based on Principal Component Analysis (PCA) | X. Vanden Eynde and P. Bertrand | Surface and Interface Analysis | 25 | 878 | 1997 | |
| 4/26/1999 | Molecular Weight Effects on Polystyrene Fingerprint ToF-SIMS Spectra | X. Vanden Eynde, P. Bertrand, R. J‚r“me | Macromolecules | 30 | 6407 | 1997 | |
| 8/22/2001 | Computer simulation of ion sputtering of polyatomic multilayered targets | B.J.Ber,V.S.Kharlamov,Yu.A.Kudrjavtsev,A.V.Merkulov,Yu.V.Trushin,E.E.Zhurkin | Nuclear Instruments and Methods in Physics Research B, Beam Interactions with Materials and Atoms | 127/128 | 286-290 | 1997 | |
| 2/26/1998 | Excitonic transitions in (GaAs)1-x(Ge2)x/GaAs multilayers grown by magnetron sputtering | B. Salazar-Hernandez, M.A. Vidal H. Navarro-Contreras, R. Asomoza and A. Merkulov | Appl. Phys. Lett. | 72 | 94-96 | 1998 | |
| 4/24/1998 | Cs+ Speciation on Soil Particles by TOF-SIMS Imaging | Gary S. Groenewold, Jani C. Ingram, Travis McLing, Anita K. Gianotto, Recep Avci | Analytical Chemistry | 70, No. 3 | 534-539 | 1998 | |
| 6/3/1998 | Grain-Boundary Diffusion of Strontium in (La,Ca)CrO3 Perovskite by SIMS | T. Horita, N. Sakai, T. Kawada, H. Yokokawa, and M. Dokiya | Journal of the American Ceramic Society | 81 | 315 |