Sputtering Phenomena Encountered in Surface and Thin-Film Analysis, *Williams, P., Arizona State University, Tempe, AZ

Ionization Phenomena in SIMS; *Wittmaack, K.; Institute of Radiation Protection, Germany

Semiconductor Characterization by SIMS, *Magee, C., Evans East, Plainsboro, NJ

Static SIMS - Surface Mass Spectrometry for Organic Materials; *Vickerman, J.C.; University of Manchester, United Kingdom

SIMS Isotopic Analysis in Geo- and Cosmochemistry; *Zinner, E.; McDonnell Center for the Space Sciences and Washington University, St. Louis, MO

Isotope Ratio Measurements Over Micro-Areas in SIMS - The Challenge of High Precision Repeatability; *Slodzian, G.; Chaintreau, M.; Dennebouy, R.; Rasser, B.; Universite Paris - Sud, France

Isotopic Fractionation Effects in SIMS Studied Using an Isolab 54 Ion Probe; *Lyon, I.C.; Saxton, J.M.; University of Manchester, United Kingdom

High-Precision Isotopic Measurements with the CAMECA IMS 6f; *Hauri, E.; Carnegie Institution, Washington, DC

Oxygen Isotopic Measurements with the UCLA CAMECA IMS 1270 Ion Microprobe: Applications in Cosmochemistry; *McKeegan, K.D.; Leshin, L.A.; Coath, C.; Choi, B.-G.; Engrand, C.; University of California, Los Angeles, CA

SHRIMP RG at Stanford University; *Ireland, T.R.; Stanford University, Palo Alto, CA

Reproducibility Aspects of SIMS Isotope Ratio Measurements; *Adriaens, A.; Adams, F.; University of Antwerp, Belgium

SIMS Studies of Corrosion in Nuclear Reactor Components; *Bushby, S.J.; AECL, Chalk River Laboratories, Canada

Microscale Boron Isotope Analysis in Mantle Rocks and Meteorites; *Chaussidon, M.; Robert, F.; Mangin, D.; Hanon, P.; Rose, E.; CRPG - CNRS, France

Oxygen and Carbon Isotope Analysis by SIMS: A Case Study of the Martian Meteorite, ALH84001; *Eiler, J.M.; Valley, J.W.; Graham, C.; Stolper, E.M.; California Institute of Technology, Pasadena, CA

The Isotopic Compositions of Presolar Dust Grains from Primitive Meteorites; *Zinner, E.; Amari, S.; Nittler, L.; McDonnell Center for Space Sciences & Washington University, St. Louis, MO

Automated SIMS for Determining Isotopic Distributions in Particle Populations; *Simons, D.S.; Gillen, G.; Fleming, R.H.; McNitt, P.J.; National Institute of Standards and Technology, Gaithersburg, MD

Tissue Labeling in Biological SIMS Imaging: "Hot" and "Cold" Ideas; *Linton, R. W.; University of North Carolina, Chapel Hill, NC

Subcellular Distribution of Biomolecules by SIMS; *Galle, P.; University of Paris, France

Mapping Phosphocholine Secondary Ion Emission in the Brain; *Todd, P. J.; McCandlish, C. A.; McMahon, J. M.; Oak Ridge National Laboratory, Oak Ridge, TN

TOF-SIMS Imaging for Combinatorial Chemistry and Drug Discovery Research; Braun, R.M.; Pacholski, M.L.; *Winograd, N.; Pennsylvania State University, University Park, PA

High Resolution SIMS Mapping of Divalent Cations in Active Chromosomes; *Levi-Setti, R.; Chabala, J. M.; Gavrilov, K.; Strick, R.; Strissel, P. L.; University of Chicago, Chicago, IL

Dynamic SIMS Ion Microscopy: Back to the Future; *Morrison, G. H.; Chandra, S.; Cornell University, Ithaca, NY

Molecule Specific Imaging of Human Red Blood Cells Using TOF-SIMS; *Pacholski, M. L.; Cannon Jr., D. M.; Ewing, A. G.; Winograd, N.; Penn State University, University Park, PA

Subcellular Localization of Isotopes and Labelled Molecules by SIMS; *Hindie, E.; University of Paris, France

Improvement in Biomedical Imaging by SIMS (IMS 3F, 4F, nanoSIMS); *Larras-Regard, E.; Mony, M.C.; Universite Paris-Sud, France

Tissue Distribution and Subcellular Location of N-(2-diethylaminoethyl)-4-iodobenzamide in Melanoma: A Scanning Ion Microscope Analysis; *Chehade, F.; Michelot, J.; Hindie, E.; deLabriolle-Vay, C.; Moreau, M.F.; Veyre, A.; Jeanguillaume, C.; Dennebouy, R.; SC27 Inserm, France

Sample Preparation Considerations for Dynamic SIMS Imaging of a Boronated Drug in Cancerous and Normal Human Brain Tissues for Boron Neutron Capture Therapy; *Smith, D. R.; Chandra, S.; Morrison, G. H.; Cornell University, Ithaca, NY

SIMS Assay of Flourine Across the Dentin of Exfoliated Primary Teeth; *Griffis, D. P.; Ricks, D. A.; Bawden, J. W.; NCSU, Raleigh, NC

Roadmap for the Advanced Characterization of Semiconductors by SIMS, *Bennett, J., Sematech, Austin, TX

Present State of Two-Dimensional Dopant Profiling, *Dowsett, M. G.; University of Warwick, UK

Characterization of Conductor Etching by Focused Ion Beam Secondary Ion Mass Spectrometry; *Downey, S.W.; Stevie, F.A.; Colonell, J.I.; Brown, S.; Dingle, T.; Christman, L.; Brown, J.; Lucent Technologies, Orlando, FL

A Method to Reduce Molecular Interferences in SIMS: Trace-Element Accelerator Mass Spectrometry (TEAMS); *McDaniel, F.D.; Datar, S.A.; Guo, B.N.; Renfrow, S.N.; Matteson, S.; Zoran, V.I.; Zhao, Z.Y.; Anthony, J.M.; University of North Texas, Denton, TX

Comparison of Mass Spectroscopy of Recoiled Ions (MSRI) with SIMS for Trace Analysis of Na,Al,Cu and Fe Contaminants on Si(100) and Ge(100) Surfaces; *Van Stipdonk, M.; Eipers, K.; Waters, K.; Burton, W.; Ulrich, S.; Schultz, J.A.; Ionwerks, Houston, TX

Whole-Wafer Contaminant Distribution by TOF-SIMS Analysis; *Lindley, P. M.; Radicati, F.; Mowat, I. A.; McCaig, L. A.; Kendall, M.; Charles Evans & Associates, Redwood City, CA

Characterization of GaN and Related Compounds by SIMS; *Gao, Y.; Mitha, S.; Huang, C.; Clark-Phelps, R.; Shingu, K.; Charles Evans & Associates, Redwood City, CA

Quantitative Analysis of C, O, Si and Mg Impurities in Al_1-xGa_xN; *Griffis, D. P.; Loesing, R.; Ricks, D. A.; Bremser, M. D.; Davis, R. F.; NCSU, Raleigh, NC

Quantitative In-Depth SIMS Analysis of Impurities in Gallium Nitride with Implanted Standard Samples; *Kovarsky, A. P.; Kudriavtsev, Y. A.; Strykanov, V. S.; Vatnik, M.; Medhanobr-Analyt Co, Russia

Quantitative 3D Characterization of III-V Semiconductor Alloys by MCs⁺ SIMS; *Juhel, M.; Patriarche, G.; Silvestre, L.; Ougazzaden, A.; Legay, Ph.; France Telecom/CNET, France

Characterization of Aluminum Oxide-Semiconductor Interfaces by SIMS and AES Depth Profiles; *Chang, Y.-L.; Lefforge, D.; Rosner, J.; Shi, S.; Hu, E.; Hewlett-Packard, Palo Alto, CA

Depth Profiling of Nitrogen in Sub- 10 nm Thick Gate Oxides; *Burnham, J. S.; Hook, T. B.; Lavoie, M. A.; Riendeau, J. B.; Scilla, G. J.; IBM Microelectronics Division, Essex Junction, VT

SIMS Depth Profiling of Ultra Shallow Implants and Junction: Present Performance and Future Potential, *Dowsett, M., University of Warwick, United Kingdom

A series of brief oral presentations will be given by the following authors. Full papers will be presented as posters.

Erosion Rate Change and Surface Roughening in Si during Oblique O₂⁺ Bombardment with Oxygen Flooding; *Jiang, Z. X.; Alkemade, P. F. A.; Delft University of Technology, The Netherlands

Ultra Shallow Depth Profiling by TOF-SIMS: Investigation of the Transient Region; *Iltgen, K.; Niehuis, E.; Brox, O.; Benninghoven, A.; Universitat Munster, Germany

Depth Profiling of Ultra-Shallow B Implants Using a CAMECA IMS-6F; Neil, T.; Wu, L.; *Sieloff, D.; Lee, J.J.; Dyer, D.; Collins, S.; Motorola, Austin, Texas

SIMS Measurements of Ultra-Shallow Junctions Comparing Normal and Oblique Angle Primary Ion Beam Bombardment; *Mount, G.; Hitzman, C. J.; Van Lierde, P.; Charles Evans & Associates, Redwood City, CA

SIMS Depth Profiling of Ultra-Shallow Boron Implants in Silicon: Use of Low Energy O₂⁺ Primary Ion Bombardment and Oxygen Flooding of the Sample Surface; *Denker, M. S.; Magee, C. W.; Evans East, Plainsboro, NJ

Quantitative Depth Profiling of Shallow Boron Distributions in Silicon with Oxygen Sputtering: A Comparison of Normal Incidence vs Oblique Incidence; *Ronsheim, P. A.; Lee, K. L.; Patel, S. B.; Schuhmacher, M.; IBM Corporation, Hopewell Junction, NY

Concentration and Depth Calibration in SIMS Depth Profiling of Shallow Doping Distributions under Different Conditions of Oxygen Incorporation; *Wittmaack, K.; Institute of Radiation Protection, Germany

Secondary Molecular Ion Emission in Static SIMS of Organic Materials, *Bertrand, P., Delcorte, A., Université Catholique de Louvain, Belgium

MD Simulation of Particle Bombardment Induced Desorption Processes; Liu, K. S. S.; Vickerman, J. C.; *Garrison, B. J.; Pennsylvania State University, University Park, PA

Unimolecular Dissociation of Metastable Secondary Ions in SIMS of Polymers; *Delcorte, A.; Bertrand, P.; Catholic University, Belgium

Time of Flight Secondary Ion Mass Spectrometry Study of Ion Formation Mechanism: Effects of End Group Chemistry; *Yan, W.-Y.; Gardella, Jr., J. A.; State University of New York, Buffalo, NY

Secondary Ion Emission from Molecular Overlayers: Thiols on Gold; *Rading, D.; Kersting, R.; Benninghoven, A.; Universitat Munster, Germany

Secondary Ion Emission from Polymer Surfaces under Ar⁺, Xe⁺ and SF₅⁺ Bombardment; Kotter, F.; *Niehuis, E.; Benninghoven, A.; Universitat Munster, Germany

Polyatomic Primary Projectiles for the Chemical Characterization of Organics on Surfaces; *Harris, R.D.; Diehnelt, C.W.; Van Stipdonk, M.J.; Schweikert, E.A.; Texas A & M University, College Station, TX

Depth Profiling Studies of Interfacial Phenomena in Polymer Thin Films; *Strzhemechny, Y.; Schwarz, S. A.; Zheng, X.; Liu, Y.; Sokolov, J.; Rafailovich, M.; Queens College of CUNY, Flushing, NY

Combined TOF-SIMS/XPS Study of Plasma Modification and Metallization of Polymers; *Wolany, D.; Faldung, T.; Gantengfort, T.; Wiedmann, L.; Benninghoven, A.; Universitat Munster, Germany

TOF SIMS Characterization of Fluorinated Self-Assembled Monolayers; *Castner, D. G.; Tsao, M.-W.; Rabolt, J. F.; University of Washington, Seattle, WA

Molecular Imaging of Frozen-Hydrated Model Membrane Systems; *Cannon, D.M.; Pacholski, M.L.; Ewing, A.G.; Winograd, N.; Pennsylvania State University, University Park, PA

The Use of SIMS to Investigate As-Rolled Aluminum Alloy Sheet; *Chater, R.J.; Christodoulou, L.; Kilner, J.A.; Imperial College of Science, Technology & Medicine, United Kingdom

Plasma SNMS Depth Profiling, Tracer Isotope Oxidation and Ion Implantation:An Efficient Combination for Studying High-Temperature Oxidation Mechanisms; *Jenett, H.; Sunderkotter, J. D.; Niebuhr, T.; Stroosnijder, M. F.; Institut fur Spektrochemie und angewandte Spektroskopie (ISAS), Germany

Monitoring the Diffusion of Ti and O in Sputtered TiO₂ Surfaces using Static Secondary Ion Mass Spectrometry and Isotopic Labelling Studies; *Henderson, M. A.; Pacific Northwest National Laboratory, Richland, WA

The Use of Static and Dynamic SIMS in the Analysis of Ceramic and Amorphous Materials; *Leone, E.A.; Allied Signal, Morristown, NJ

Study of Grain Boundary Chemistry of Alumina Ceramics for Corrosion Resistance; *Gavrilov, K.L.; Chabala, J.M.; Levi-Setti, R.; University of Chicago, Chicago, IL

TOF SIMS Study of Pr₆0₁₁ - MoO₃ Mixtures: Effects of the Ultrasonic Treatment During the Preparation; *Poleunis, C.; De Smet, F.; Devillers, M.; Bertrand, P.; Universite Catholique de Louvain, Belgium

Fundamental Investigations with Imaging Laser-SNMS; *Schnieders, A.; Kollmer, F.; Benninghoven, A.; Universitat Munster, Germany

Some Aspects of Laser SNMS Quantitation; *Wucher, A.; Wulff, M.; Universitat Kaiserlautern, Germany

Grazing-Incidence Depth Profiling by Laser-Ionization SNMS; *Higashi, Y.; Maruo, T.; Homma, Y.; NTT Science and Core Technology, Japan

Tertiary and Negative Secondary BO_x Ions in HF-Plasma SNMS; *Jenett, H.; Hodoroaba, V.-D.; Institut fur Spektrochemie und angewandte Spektroskopie, Germany

Depth Profiling and Imaging with Laser Postionization SNMS; *Arlinghaus, H. F.; Guo, X. Q.; Whitaker, T. J.; Atom Sciences Inc., Oak Ridge, TN

Sputtering Behaviour of Sintered Ceramic Ti-Al-(Si)-O Investigated by HF-Plasma-SNMS; *Boerner, H.; Jenett, H.; Hodoroaba, V.-D.; Universitat Leipzig, Germany

Positive and Negative Secondary Ions in the High-Frequency Sputtering Mode (HFM) in HF-Plasma SNMS; *Jenett, H.; Hodoroaba, V.-D.; Institut fur Spektrochemie und angewandte Spektroskopie (ISAS), Germany

Hard Disk Drive Component Analysis Using Time-Of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS); *Schuerlein, T. J.; Lindley, P. M.; Evans, C. A.; Charles Evans & Associates, Redwood City, CA

Investigations on the Oxidation Behavior of Fe- and Cr-based ODS Alloys for Applications in the Solid Oxide Fuel Cell Using SIMS and SNMS; *Breuer, U.; Holzbrecher, H.; Tyagi, A.K.; Quadakkers, W.J.; Becker, J.S.; Dietze, H.-J.; Research Centre Juelich, Germany

OH Group Evaluation on the Surface of Metal Oxide Films Using TOF-SIMS and XPS; *Takeda, S.; Fukawa, M.; Hayashi, Y.; Matsumoto, K.; Asahi Glass Co., Ltd, Japan

SIMS Measurement of Chloride Ion Diffusion in an SiO₂-Filled Epoxy; *Vajo, J. J.; Hughes Research Laboratories, Malibu, CA

The Use of SIMS to Investigate a Fine Ceramics Conversion Process; *Chater, R.J.; Rogers, P.S.; McPhail, D.S.; Imperial College of Science, Technology & Medicine, United Kingdom

Application of Static Secondary Ion Mass Spectrometry in Probing the Interaction of Water with Well-Defined Oxide Surfaces; *Henderson, M. A.; Pacific Northwest National Laboratory, Richland, WA

A Surface SIMS Study of IrO₂ - Ta₂O₅ Mixed Oxide Electrodes; Daolio, S.; Facchin, B.; Gelosi, S.; *Pagura, C.; DeBattisti, A.; Nanni, L.; CNR IPELP, Italy

Surface and In-Depth Imaging SIMS Characterization of Complex Engineered Silver Halide Microcrystals; *Chabala, J. M.; Bohonek, J.; Levi-Setti, R.; Maternaghan, T. J.; Kriebel, A. N.; University of Chicago, Chicago, IL

SIMS Investigation Into the Deportment of Undesirable Elements in Mineral Products; *Chryssoulis, S.; Stowe, K.; Bolin, N.J.; Dunne, R.; AMTEL, Canada

Estimation of Surface Gold on Activated Carbon and Carbonaceous Matter by TOF-LIMS and Gold Loading Tests; Wan, R.Y.; Chryssoulis, S.; *Weisener, C.G.; Dimov, S.S.; AMTEL, Canada

TOF-LIMS Studies of pH Modifiers in Zinc Sulphide Flotation; *Kim, J.; Nesset, J.; Parker, S.; Chryssoulis, S.; Noranda Technology Centre, Canada

Measurements of REE Abundances in NIST SRM-600 Series Glasses and Direct Measurements of REE Oxide to REE Ion Signals; *Fahey, A.J.; National Institute of Standards and Technology, Gaithersburg, MD

Silver Isotope Analysis of Native Silver; *Didenko, P. I.; National Academy of Sciences, Ukraine

Useful Yields from Geologic Matrices: Comparing SIMS and Laser Ablation - Sector Field- ICP Mass Spectrometry; *Hervig, R. L.; Shuttleworth, S.; Arizona State University, Tempe, AZ

Isotopic Enrichment in Sputtering at Low Incident Ion Energies; Zhang, J.; Shutthanandan, V.; *Ray, P. K.; Tuskegee University, Tuskegee, AL

Elemental and Molecular Imaging of the Surface of Human Hair Using Secondary Ion Mass Spectrometry; *Roberson, S.; Gillen, G.; National Institute of Standards and Technology, Gaithersburg, MD

TOF-SIMS Study of Photoactivatable Reagents for Glycoengineering Biomimetic Applications; *Leonard, D.; Chevolot, Y.; Mathieu, H. J.; EPFL-DMX-LMCH, Switzerland

Analysis of Cationic Lipids Used in Gene Therapy by Static SIMS; *Nicola, A.J.; Gusev, A.I.; Gao, X.; Brigham, K.L.; Hercules, D.M.; Vanderbilt University, Nashville, TN

Intracellular Imaging of Iodinated Contrast Media in Rat Kidney by SIMS (IMS 4F); Larras-Regard, E.; *Mony, M.C.; Universite Paris-Sud, France

Intracellular Aluminum Accumulation and Inhibition of Cell Division and Expansion in Primary Roots of Two Differentially Tolerant Legume Genotypes; *Holland, M.J.; Lazof, D.B.; Linton, R.W.; University of North Carolina, Chapel Hill, NC

Application of SIMS to Examination of Organisms; *Oishi, S.; National Institute for Resources and Environment, Japan

Ion Microscopy Imaging of Boronated Drugs in Kidney Tissues of Animal Models for Boron Neutron Capture Therapy of Cancer; *Smith, D. R.; Lorey, II, D. R.; Chandra, S.; Morrison, G. H.; Cornell University, Ithaca, NY

Boron Neutron Capture Therapy of Liver Cancer: A SIMS Imaging Feasibility Study; *Ling, Y.C.; Huang, J.F.; Chen, K.Y.; Chen, F.D.; National Tsing Hua University, Taiwan

The Role of TOF-SIMS Towards the Development of a Cell-Based Biosensor; *Leonard, D.; Makohliso, S.A.; Giovangrandi, L.; Mathieu, H.J.; Aebischer, P.; Ilegems, M.; Swiss Federal Institute of Technology, Switzerland

Metal Analysis in Alzheimer's Disease Senile Plaques Using Secondary Ion Mass Spectrometry (SIMS); *Chikhale, E.G.; Brady, D.R.; Swyt, C.R.; Gillen, G.; Smith, Q.R.; Lab. of Neurosciences, Natl Inst on Aging, Natl Inst Health, Bethesda, MD

Detection of Low Level Contaminants at Subsurface Interfaces Using Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS); *Schuerlein, T. J.; Lindley, P. M.; Reich, D. F.; Schueler, B. W.; Charles Evans & Associates, Redwood City, CA

Analysis of Post-Plasma Etch Sidewall "Polymer" Residue by TOF-SIMS; *Hues, S.M.; Davin, C.M.; Motorola, Austin, Texas

TOF-SIMS and XPS Characterisation of Stearic Acid Langmuir Blodgett Films; Kenens, C.; *Conard, T.; Vandervorst, W.; IMEC, Belgium

Analysis of Organic Contaminants on Silicon Wafers by TOF-SIMS and Purge-and-Trap GC/MS; *Karen, A.; Ozawa, K.; Ishitani, A.; Toray Research Center, Japan

The Correlation between Surface SIMS and TXRF Measurements of Surface Metal Contamination on Silicon; *Smith, S. P.; Metz, J.; Charles Evans & Associates, Redwood City, CA

Role of Cavities as Strong Sinks for Interstitials in Silicon; Wong-Leung, J.; Williams, J. S.; *Petravic, M.; Kinomura, A.; The Australian National University, Australia

A SIMS & XTEM Study of the Effects of Implanted Nitrogen on Diffusion of Boron and Evolution of Extended Defects; *Christiansen, J.; Park, H.; Ilderem, V.; Jasper, C.; Kaneshiro, M.; Jones, K.; Motorola, Mesa, AZ

Quantitative Surface Imaging of Fluorinated Alkane Thiol Monolayers by SIMS: Applications for Electron and Ion Beam Dose Mapping; *Gillen, G.; Wight, S.; Herne, T.; National Institute of Standards and Technology, Gaithersburg, MD

TOF-SIMS Characterization of Silicon Wafer Surfaces with Covalently Attached Organic Molecules; *Molis, S.; IBM Corporation, Hopewell Junction, NY

Search for Optimum Sample Preparation Techniques in TOF-SIMS Analysis of Anhydrotetracycline Based Organometallic Complexes; *Szymzcak, W.; Wessels, J.; Wittmaack, K.; Institute of Radiation Protection, Germany

Characterization of Functional Films on Solid Substrates by TOF-SIMS; *Canteri, R.; Malacarne, C.; Rigo, A.; Vianello, F.; Zennaro, L.; Scarpa, M.; Anderle, M.; CMBM, Italy

Investigation of Electron Induced Damaging of Molecular Overlayers by Imaging TOF-SIMS; *Rading, D.; Liebing, V.; Becker, G.; Mort, M.; Fuchs, H.; Benninghoven, A.; Universitat Munster, Germany

Temperature Programmed Static SIMS Investigation of Ag and Si Surfaces; *Egbers, G.; Hackling, K.; Benninghoven, A.; Universitat Munster, Germany

TOF-SIMS Investigation of Ion Generation from Self-Assembled Multilayers; Canry, J.C.; *Vickerman, J.C.; University of Manchester, United Kingdom

A Comparison Between Ion and Laser Beam Ionization on Time-Of-Flight Mass Spectrometry for Insulator Samples; *Tsugogshi, T.; Kikuchi, T.; Ohashi, M.; National Industrial Research Institute of Nagoya, Japan

Ion Induced Damage on Poly(methylmethacrylate) and Poly(ethyleneterephthalate) Investigated by TOF-SIMS and XPS; *Ichinohe, Y.; Naganuma, Y.; Soga, M.; Hoshi, T.; Endo, K.; Kudo, M.; Seikei University, Japan

Determination of Surface Morphology in PVC/PMMA Blends Using TOF-SIMS and XPS; Thomas, E.A.; *Fulghum, J.E.; Asher, S.E.; Tielsch, B.J.; Kent State University, Kent, OH

Time-of-Flight Secondary Ion Mass Spectrometry Studies of Monodisperse Cyclolinear Poly (dimethylsiloxane) Oligometers; *Hawkridge, A.M.; Gardella, Jr., J.A.; Pertsin, A.J.; State University of New York, Buffalo, NY

Detection and Mapping of Additives in Polyethylene Using Static SIMS; Walzak, M. J.; *McIntyre, N. S.; Prater, T.; Kaberline, S.; Graham, B. A.; The University of Western Ontario, London, Canada

MeV-Ion Beam Induced Desorption in Organic and Inorganic Poylmers; *Salah, H.; Touchrift, B.; Tobbeche, S.; Center for Research, CDTN, Algeria

Detemination of Molecular Weight Distributions of Fluorocarbon Films Using TOF-SIMS, MESIMS, and MALDI; *Hoffmann, C. L.; Lindley, P. M.; Schuerlein, T.; Wu, K.-J.; Odom, R. W.; Charles Evans & Associates, Redwood City, CA

TOF-SIMS Analysis of Chemical State Changes in Cresol-novolak Photoresist Surface Caused by UV Irradiation; *Saito, R.; Ichinohe, Y.; Kudo, M.; Toshiba Corporation, Japan

The Muenster High Mass Resolution Static SIMS Library; *Schwede, B.-Ch.; Niehuis, E.; Hagenhoff, B.; Heller, T.; Benninghoven, A.; Universitat Munster, Germany

TOF-SIMS Evidence of Tribochemical Reactions in the Cold Rolling of Steel; *Dauchot, G.; Puydt, Y.; Combarieu, R.; Delamare, F.; Ecole Nationale des Mines de Paris, France

Quantitative TOF-SIMS Analysis of Cryogenically Cut EPs and EPDMs; *Galuska, A. A.; Exxon Chemical Company, Baytown, TX

TOF-SIMS Analysis of Functional Groups of Polymer Surfaces Utilizing Chemical Modification; *Man, N.; Karen, A.; Takahashi, K.; Nakayama, Y.; Ishitani, A.; Toray Research Center, Japan

Determination of Segment Length Distribution of Polyimidesiloxane Copolymers with Short Polydimethylsiloxane Segment; *Zhao, J.; Rojstaczer, S.; Gardella, Jr., J. A.; SUNY, Buffalo, NY

Secondary Ion Emission From Langmuir-Blodgett Films Formed on Different Substrate Materials Investigated by TOF-SIMS; *Kudo, M.; Ogura, N.; Yamada, S.; Ichinohe, Y.; Yoshida, S.; Watanabe, T.; Hoshi, T.; Endo, K.; Seikei University Japan

Energy Dependence of Secondary Ion Emissions from Langmuir-Blodgett Films and Self Assembled Monolayers; *Hoshi, T.; Yoshida, S.; Watanabe, T.; Ichinohe, Y.; Endo, K.; Liu, Z.; Kudo, M.; ULVAC-PHI, Inc., Japan

A Comparison of Cs and C₆₀ Primary Projectiles for the Characterization of GaAs and Si Surfaces; Van Stipdonk, M.J.; *Justes, D.R.; Harris, R.D.; Schweikert, E.A.; Texas A & M University, College Station, TX

Polymers Under SF₅⁺ Ion Bombardment - A Systematic Investigation; *Hagenhoff, B.; Cobben, P. L.; Niehuis, E.; Benninghoven, A.; TASCON GmbH, Germany

Chemical Effects in Ion Formation Induced by Polyatomic Ion Impacts on Inorganic Targets; Van Stipdonk, M.J.; *English, R.D.; Harris, R.D.; Schweikert, E.A.; Texas A & M University, College Station, TX

Carbon Cluster Formation from Organic Targets Examined Using Polyatomic Primary Projectiles in SIMS; Van Stipdonk, M.J.; *Diehnelt, C.W.; Harris, R.D.; Schweikert, E.A.; Texas A & M University, College Station, TX

Polyatomic Ion Collision With Solids (Organic and Inorganic) at Low (keV) and High (MeV) Energy: Large Enhancement of Complex Secondary Ion Emission Yield; *Baudin, K.; Brunelle, A.; Della-Negra, S.; Depauw, J.; Le Beyec, Y.; Institute of Nuclear Physics, CNRS, France

Molecular Dynamics Simulations to Explore the Effect of Projectile Size on the Ejection of Organic Targets from Metal Surfaces; *Krantzman, K. D.; Pearson, B.; Zaric, R.; College of Charleston, Charleston, SC

SIMS Depth Profiling with O₂⁺ and Xe⁺ Primary Ions in Si and Al₂O₃; *Blanchard, B.; Holliger, P.; CEA Grenoble, France

Anomalies in Shallow Depth Profiles of Boron in Silicon; *Chi, P.H.; National Institute of Standards and Technology, Gaithersburg, MD

Ultra Shallow Depth Profiling Comparison Between TOF-SIMS and Quad SIMS; *Hoshi, T.; Zhanping, L.; Tozu, M.; ULVAC-PHI, Inc., Japan

Enhanced Depth Profiling of Ultra-Shallow Implants Using Improved Low Energy Ion Guns on a Quadrupole SIMS Instrument; *Hitzman, C. J.; Mount, G.; Charles Evans & Associates, Redwood City, CA

Accurate SIMS Depth Profiling of Ultra-Shallow Phosphorus Dopant Distributions in Silicon; Smith, S. P.; *Hitzman, C. J.; Van Lierde, P.; Charles Evans & Associates, Redwood City, CA

Ultra-Shallow Junction Measurements: Optimizing SIMS for Implanted and Processed Wafers; *Chia, V. K. F.; Edgell, M. J.; Chu, P. K.; Charles Evans & Associates, Redwood City, CA

Precision Depth Profiling of Si and GaAs Semiconductors by Cs Low Energy Ion Beam; Pustovit, A.N.; *Vyatkin, A.F.; Russian Academy of Sciences, Russia

Experimental Techniques for Ultra-Shallow Profiling Using Sub-keV Primary Beams; *Dowsett, M. G.; Elliner, D. I.; Ormsby, T. J.; Cooke, G. A.; University of Warwick, UK

A Comparative SIMS Study of Profiling Ultra-Shallow Dopants in Si; *Ling, Y.C.; Lee, J.H.; Wang, C.C.; Lee, J.T.L.; Tsui, B.Y.; National Tsing Hua University, Taiwan

Comparison of Decay Lengths in SIMS Depth Profiling Under Oxygen and Cesium Bombardment; *Wittmaack, K.; Institute of Radiation Protection, Germany

Angular Dependence of Transition Depths in Oxygen Bombarded Silicon; *Wittmaack, K.; Institute of Radiation Protection, Germany

Application of Sputter Deposition for SIMS Analysis; *Shi, P.; Technical University, DenmarkSIMS Characterization of Interfacial Nitrogen for Oxynitride Dielectric Thin Films; Neil, T.; *Wu, L.; Sieloff, D.; Lee, J.J.; Hegde, R.I.; Motorola, Austin, Texas

SIMS Analyses of Silicon-Oxynitride Films Formed by N₂⁺ and NO⁺ Implantation; *Pudenzi, M.A.A.; Diniz, J.A.; Tatsch, P.J.; University Estadual de Campinas, Brazil

Improved Depth Resolution of Ultra-Thin ONO Layers Using High Angle Secondary Ion Mass Spectrometry; *Morinville, W. R.; Blackmer, C.; Micron Technology, Boise, ID

Transient Phenomena of the Si⁺ Signal During the Sputtering of Silicon with Oxygen; *Serrano, J.J.; Blanco, J.M.; Guzman, B.; Aguilar, M.; Ameziane, O.; Universidad Politecnica de Madrid, Spain

Quantitative Depth Profiling of Shallow Boron Distributions in Silicon with Oxygen Sputtering: A Comparison of Normal Incidence vs Oblique Incidence; *Ronsheim, P. A.; Lee, K. L.; Patel, S. B.; Schuhmacher, M.; IMB Corporation, Hopewell Junction, NY

Erosion Rate Change and Surface Roughening in Si during Oblique O₂⁺ Bombardment with Oxygen Flooding; *Jiang, Z. X.; Alkemade, P. F. A.; Delft University of Technology, The Netherlands

Concentration and Depth Calibration in SIMS Depth Profiling of Shallow Doping Distributions under Different Conditions of Oxygen Incorporation; *Wittmaack, K.; Institute of Radiation Protection, Germany

Ultra Shallow Depth Profiling by TOF-SIMS: Investigation of the Transient Region; *Iltgen, K.; Niehuis, E.; Brox, O.; Benninghoven, A.; Universitat Munster, Germany

SIMS Measurements of Ultra-Shallow Junctions Comparing Normal and Oblique Angle Primary Ion Beam Bombardment; *Mount, G.; Hitzman, C. J.; Van Lierde, P.; Charles Evans & Associates, Redwood City, CA

SIMS Depth Profiling of Ultra-Shallow Boron Implants in Silicon: Use of Low Energy O₂⁺ Primary Ion Bombardment and Oxygen Flood; *Denker, M. S.; Magee, C. W.; Evans East, Plainsboro, NJ

Depth Profiling of Ultra-Shallow B Implants Using a CAMECA IMS-6F; Neil, T.; Wu, L.; *Sieloff, D.; Lee, J.J.; Dyer, D.; Collins, S.; Motorola, Austin, Texas

Ultra Shallow Two Dimensional SIMS Profiling Using a Low-Energy Ion Beam, Gibbons, R. *Dowsett, M.G., Cooke, G.A., University of Warwick, UK

A Ta₂O₅/SiO₂ Delta Oxide Multilayer Proposed as a Reference Material for SIMS Depth Profiling; *Moon, D. W.; Kim, K. J.; Kim, H. K.; Korea Research Institute of Standards and Science, Korea

Depth Resolution of Si_xGe_1-x Multilayers and Superlattice Structures Under Oblique O₂⁺ Primary Beam; *Prudon, G.; Gautier, B.; Dupuy, J.C.; Berthelemy, S.; Schmitt, J.; Dubois, C.; Delmas, J.; Vallard, J.P.; Laboratoire de Physique de la Matiere, France

6 Months Repeatability of TOF-SIMS Depth Profile; *Hoshi, T.; Zhanping, L.; Tozu, M.; ULVAC-PHI, Inc., Japan

Resolving Two Adjacent Delta layers: From Rayleigh Criterion to Information Entropy; *Chu, D.P.; Dowsett, M.G.; University of Warwick, United Kingdom

A Review of SIMS Instrumentation Design Choices, *Mullock, S., Kore Technology Limited, UK

Ion and Electron Dual Focused Beam Apparatus for Three-Dimensional Microanalysis; *Sakamoto, T.; Cheng, Z.; Takahashi, M.; Owari, M.; Nihei, Y.; University of Tokyo, Japan

Primary Ions Beams with Low Impact Energy on the CAMECA IMS 6F; *Schuhmacher, M. ; Rasser, B.; Renard, D.; CAMECA, France

Evaluating the Importance and Performance of a Liquid Nitrogen-Cooled Sample Stage for TOF-SIMS Analysis; *Strossman, G. S.; Lindley, P. M.; Bowers, W. D.; Charles Evans & Associates, Redwood City, CA

A New Time-of-Flight Secondary Ion Mass Spectrometer with Integral Ion Gun; *Lawrence, C. G.; Vickerman, J. C.; Corlett, C. A.; Mullock, S. J.; Kore Technology Limited, UK

New Developments in Cameca SIMS Instrumentation, *Conty, C., Horreard, F., Cameca Instruments, France

New Developments in PHI SIMS Instrumentation, *Schueler, B.W., Physical Electronics, Redwood City, CA

The New Atomika SIMS 4500 for Shallow Junction Profiling by eV-Primary Ion Beams; *Maul, J. L.; Patel, S. B.; ATOMIKA Instruments GmbH

Open Discussion

Barrick and Gold Characterization by SIMS and Related Techniques; *Thomas, K.; Barrick Gold Corporation, Canada

Measurement of Lead Isotope Ratios in Common Silicate and Sulfide Phases Using the CAMECA IMS 1270 Ion Microprobe; *Layne, G. D.; Shimizu, N.; Woods Hole Oceanographic Institution, Woods Hole, MA

Characterization of Arsenic in Estuary Sediments; *Chryssoulis, S.; Weisener, C.; Kafritsa, G.; Davis, A.; AMTEL, Canada

Microanalysis for Sulfur and Oxygen Isotopic Ratios Using SIMS; *Morishita, Y.; Sasaki, A.; Kita, N.T.; Togashi, S.; Geological Survey of Japan, JapanSIMS Characterization of Mineral Assemblages in the Nuclear Reactor Zone 13 at Oklo, Gabon; *Holliger, P.; CEA Grenoble, France

Dynamic SIMS Imaging Using Sector Field Instruments; *Van der Heide, P. A. W.; The University of Western Ontario, London, Canada

Spatially 3-dimensional SIMS Analysis with MCs⁺ Ions; *Gnaser, Hubert; Universitat Kaiserslautern, Germany

Large Field-of-View Inorganic Mapping using a Mattauch-Herzog Geometry Secondary Ion Mass Spectrometer; *Short, R. T.; Wiedenbeck, M.; Guo, X. G.; McMahon, J. M.; Riciputi, L. R.; Todd, P. J.; Oak Ridge National Laboratory, Oak Ridge, TN

High Resolution SIMS Imaging by Secondary Ion Beam Rastering; *Stadermann, F. J.; Reger, N.; Washington University, St. Louis, MO

Static SIMS Imaging Using TOF Instruments; *Bryan, S. R.; Watson, D. G.; Physical Electronics, Inc., Eden Prairie, MN

Multivariate Methods for TOF-SIMS Imaging; *Willse, A.; Tyler, B.; Montana State University, Bozeman, MT

Chemometrics; Barry M. Wise

Secondary Ion Emission from keV Cluster Impacts; *Van Stipdonk, M.J.; Harris, R.D.; Schweikert, E.A.; Texas A & M University, College Station, TX

Surface Analysis Using Slow, Highly Charged Ions Like Au⁶⁹⁺; *Schenkel, T.; Barnes, A.V.; Hamza, A.V.; Schneider, D.; Lawrence Livermore National Laboratory, Livermore, CA

Kinetic Energy Distributions of Multiply-Charged Secondary Ions Formed Under O₂⁺, O^-, Ar⁺ & Cs⁺ Bombardment of Mg, Al and Ag Surfaces; *Franzreb, K.; Van der heide, P. A. W.; The University of Western Ontario, London, Canada

Multiply-Charged Ions in Secondary Ion Emission; *Li-Fatou, A. V.; Charles Evans & Associates, Redwood City, CA

Ion Yield and Work Function Changes During Transient Cesium Incorporation; *Gnaser, H.; Universitat Kaiserslautern, Germany

Monte Carlo Simulation of the Formation of M₂⁺ -Molecular Ions Sputtered from Metallic Materials; *Vlekken, J.; Wu, T.-D.; D'Olieslaeger, M.; Knuyt, G.; Vandervorst, W.; De Schepper, L.; Limburgs Universitair Centrum, Belgium

The Formation of MX⁺ Molecular Secondary Ions; *Schroeer, J.M.; Illinois State University, Normal, IL

Formation of Sputtered Semiconductor Clusters; Heinrich, R.; *Wucher, A.; Universitat Kaiserslautern, Germany

The Use of the SIMS Technique in Studies of Sputtered Cluster Ion Fragmentation; *Veryovkin, I. V.; Adriaens, A.; Adams, F.; Verkhoturov, S. V.; University of Antwerp, Belgium

Fragmentation of Heterogeneous Cluster Ions Under Metals Sputtering by Cs⁺ Ions; *Dzhemilev, N.Kh.; Bekkerman, A.D.; Arifov Institute of Electronics, Uzbekistan

Influence of the Cs Concentration on the Formation of SiCs_x Clusters; *Mootz, T.; Bieck, W.; Migeon, H.N.; Centre de Recherche Publique - Centre Universitaire, Luxembourg

TUTORIALS: Detectors, Pumping Systems, Surface Profilometry

Operational Characteristics and Maintenance of State-of-the-Art Electron Multipliers Used in SIMS; John Gray, ETP Scientific

Study of the Transient Phenomena in SIMS Depth Profiling Using Combined SIMS-RBS; *Deleu, J.; Brijs, B.; Vandervorst, W.; IMEC, Belgium

TOF-SIMS Depth Profiling with Optimized Depth Resolution; *Iltgen, K.; Niehuis, E.; Benninghoven, A.; University Munster, Germany

Establishment of Equilibrium in the Top Nanometers, Using Sub-keV Beams; *Dowsett, M. G.; Ormsby, T. J.; Elliner, D. I.; Cooke, G. A.; University of Warwick, Coventry, UK

Comparison of Na SIMS Depth Profiles in SiOx Films Obtained with Chemical Etching, Self-Charge Compensation, N₂⁺; *Saito, R.; Ichinohe, Y.; Kudo, M.; Toshiba Corporation, Japan

Chemically Enhanced Secondary Ion Mass Spectrometry Investigations for Profiling Shallow Doping Distributions; *Furman, B. K.; Ronsheim, P. A.; IBM Microelectronics, Hopewell Junction, NY

SIMS Depth Profiles of ¹H and ²H at the SiO₂/Si Interface of Deuterium-sintered CMOS Devices; *Lee, J.; Baker, J. E.; Wilson, R. G.; Lyding, J. W.; University of Illinois, Urbana, IL

SIMS Study of Post-Implant Migration of Boron in Photoresist; *Parks, C. C.; Glawischnig, H.; Murphy, R.; IBM Analytical Services, Hopewell Junction, NY

Small Area Failure Analysis on the Fully Processed Wafers by SIMS; *Lu, S.; Evans, K.; Motorola, Phoenix, AZ

Quantitative SIMS Depth Distribution of Nitrogen in Nitrided Oxide at the SiO₂/Si Interface; *Bersani, M.; Fedrizzi, M.; Ferroni, G.; Savoia, C.; Anderle, M.; CMBM, Italy

Characterization of Thin Oxynitride Films; *Oakey, P.R.; Schauer, S.N.; Cosway, R.G.; Griswold, M.D.; Motorola, Chandler, AZ

The Depth Resolution for B and Ge Deltas in Si Using Low Energy O₂⁺ Beams at Grazing Incidence; *Alkemade, P. F. A.; Jiang, Z. X.; Van den Berg, J. A.; Badheka, R.; Armour, D. G.; Delft University of Technology, The Netherlands

Measurements of Arsenic Ultra-Shallow Implants Using SIMS; *Mount, G.R.; Hitzman, C.J.; Smith, S.P.; Van Lierde, P.; Charles Evans & Associates, Redwood City, CA

Estimation of Submicroscopic Gold in Ores by SIMS and Ultrafine Milling: A Comparative Investigation; *Vaughan, J.P.; Corrans, I.; W.A. School of Mines, Australia

Relative Sensitivity Factors for Quantitative TOF-LIMS Analysis of Mineral Surfaces; *Dimov, S.S.; Chryssoulis, S.L.; Weisener, C.G.; AMTEL, Canada

Analysis of Hydrogen Isotope Ratios by SIMS, and Application to Determining Mineral-Fluid Isotopic Fractionation Factors; *Riciputi, L. R.; Chacko, T.; Cole, D. R.; Oak Ridge National Laboratory, Oak Ridge, TN

Observations of Monovalent Ion Diffusion from Bulk Calcite at Ambient Conditions Using a Combination of TOF-SIMS Imaging and SFM; *Stipp, S.L.S.; Konnerup-Madsen, J.; Leonard, D.; Mathieu, H.J.; Copenhagen University, Denmark

REE Sensitivity Factors in Calcic Plagioclase (Anorthite); *Floss, C.; Jolliff, B.; Washington University, St. Louis, MO

SIMS as a Tool for Studying Simulated Atmospheric Chemistry: Heterogeneous Interactions of Chlorine Nitrate with Ice; *Donsig, H.; Herridge, D.; Vickerman, J.C.; University of Manchester, United Kingdom

Elemental Imaging of Cross-Sectioned Individual Particles by Ga⁺ Focused Ion Beam SIMS; *Tomiyasu, B.; Komatsubara, H.; Fukuju, I.; Satoh, M.; Owari, M.; Nihei, Y.; University of Tokyo, Japan

A Neural Network Technique to Classify Regions of Interest in SIMS Images; *Olson, J. E.; Ingram, J. C.; Groenewold, G. S.; Gianotto, A. K.; Idaho National Engineering & Environmental Lab, Idaho Falls, ID

Ion-Induced SEM Imaging of Insulators and Organics at Ulta Low Ion Beam Dose; *Reich, F.; Schueler, B. W.; Physical Electronics, Redwood City, CA

Sputtering Effects During 3D-Imaging of Indium-Tin-Oxide Sputtering Targets; *Reger, N.; Stadermann, F.J.; Ortner, H.M.; Technical University of Darmstadt, Germany

Cross-sectional SIMS Imaging Studies of the Zr/ZrO₂ Interface; *Biesinger, M. C.; Van der heide, P. A. W.; Warr, B. D.; McIntyre, N. S.; The University of Western Ontario, London, Canada

Characterization of Basalt Surfaces Using Imaging SIMS; *Ingram, J. C.; Groenewold, G. S.; Olson, J. E.; Gianotto, A. K.; Idaho National Engineering and Environmental Laboratory, Idaho Falls, ID

Characterization of Patterned Biomolecular Assemblies by Imaging Time-of-Flight Secondary Ion Mass Spectrometry; *Leufgen, K. M.; Leonard, D.; Mathieu, H. J.; Vogel, H.; LCPPM, DC, EPF, Switzerland

Determination of the Spatial Distribution of Trace Elements in Stainless Steel by Imaging Microprobe Secondary Ion MS; *Salaita, G. N.; Union Carbide Corporation, S. Charleston, WV

Imaging Time-of-Flight SIMS (TOF-SIMS) Surface Analysis of Halide Distributions in Complex Silver Halide Microcrystals; *Verlinden, G.; Gijbels, R.; Geuens, I.; Benninghoven, A.; University of Antwerp, Belgium

Surface Analysis of All Elements with Isotopic Resolution at High Ambient Pressures Using Ion Spectroscopic Techniques; *Smenthkowski, V. S.; Holecek, J. C.; Schultz, J. A.; Krauss, A. R.; Gruen, D. M.; Argonne National Laboratory, Argonne, IL

Depth Profiling of Cu in Si By Glow Discharge Mass Spectrometry (GDMS); *Nishimura, E.; Toshiba Corporation, Japan

Study of the Reaction Chemistry of Aqueous Epoxy-Amine Systems Using Time-of-Flight Secondary Ion Mass Spectrometry and X-Ray Photoelectron Spectroscopy; *Biemond, M.E.F.; De Lange, P.J.; Vertommen, L.L.T.; Mahy, J.W.G.; Akzo Nobel Central Research, The Netherlands

TOF-SIMS and XPS Analysis of Space-weathered Fluorinated Ethylene Propylene (FEP) Retrieved from the Hubble Space Telescope; *Nicholas, M.; Townsend, J.; Evans East, Plainsboro, NJ

Static SIMS: An Inter-laboratory Study; *Gilmore, I. S.; Seah, M. P.; National Physical Laboratory, Middlesex, UK

Multiple Element Ion Implants for Metal Contamination Analysis in Semiconductor Technology, *Stevie, F.A., Wilson, R.G., McKinley, J.M., Lucent Technologies, Orlando, FL

Dose Calibration of Ion Implanters for Semiconductor Production, *Stevie, F.A., Simons, D.S., McKinley, J.M., McMacken, J., Flatch, P., Santiesteban, R., Becerro, J., Lucent Technologies, Orlando, FL

Infinite Velocity SIMS Depth Profile Measurements of Oxides on Zirconium Niobium Alloys; Clarke, A. H.; Van der heide, P. A. W.; *McIntyre, N. S.; The University of Western Ontario, London, Canada

Quantification of Oxygen Precipitates in Silicon-on-Insulator Films; *Bennett, J.; Boden, T.; Hoener-Gondran, C.F.; Sematech, Austin, TX

Quantitative SIMS Analysis Using Automated Matrix Ion Species Ratio Method; *Cristy, S.S.; Sayers, J.E.; Lockheed Martin Energy Systems, Oak Ridge, TN

The Influence of Varying Oxygen Content in Ti/Si Layers on MCs⁺ SIMS Analysis; *Duemmler, W.; Weber, S.; Tete, C.; Scherrer, S.; Ecole des Mines, France

Quantification of Generated Sulfate Aerosols in Quaternary Mixtures; *Baril, M.; Liu, R.; Chen, X.; Adnot, A.; Michaud, D.; Universite Laval, Quebec, Canada

MCs⁺ Emission from II-VI Semiconductors: Yields and Formation Probabilities; *Gnaser, H.; Universitat Kaiserslautern, Germany

Quantification of Trace Elements in Semiconductors and Glass by the High Energy Method; *Higashi, Y.; Homma, Y.; Okabe, M.; Ochiai, S.; NTT Science and Core Technology, Japan

Quantification of SurfaceSIMS Data: The Influence of Oxygen-Flooding on Secondary Ion Yields During SIMS Analysis of Silicon; *Smith, S. P.; Charles Evans & Associates, Redwood City, CA

High Accuracy Stoichiometry Measurements of LT-GaAs and InP Films by SIMS; *Gao, Y.; Doctor, D.; Liu, T.; Grider, D.; Ibbetson, P.; Mishra, U.K.; Charles Evans & Associates, Redwood City, CA

Application of the Infinite Velocity Method for the Quantification of Secondary Ion Emissions; *Loesing, R.; Stadermann, F.J.; Ortner, H.M.; Technical University of Darmstadt, Germany

Quantification of Tin in Float Glass Surfaces Using O₂⁺ SIMS Depth Profiling; *Sears, A.; Dowsett, M.G.; Holland, D.; University of Warwick, United Kingdom

A Hot Filament Duoplasmatron for Generation of Fluorine-Containing Primary Ion Beams on an Ion Microscope; *Gillen, G.; Chmara, F.; National Institute of Standards and Technology, Gaithersburg, MD

On the Use of Luminous Ion Beam for Optimizing and Transmission of Charged Particles Through Complex Ion-Optical System; *Belykh, S.F.; Rasulev, U. Kh.; Redina, I.V.; Institute of Electronics, Uzbekistan

Very High Precision Sample Holders; *Jones, C. M.; Morgan, F. L.; Philips Semiconductors, Sunnyvale, CA

Metallic Contamination from Sample Holders During Surface SIMS Analyses; *Jones, C. M.; Morgan, F. L.; Philips Semiconductors, Sunnyvale, CA

Testing the CAMECA IMS 1270 Multicollector; Fercocq, P.; *De Chambost, E.; Deloule, E.; Chaussidon, M.; CAMECA, France

Analysis of the Operating Conditions of ETP Electron Multipliers Used on CAMECA IMS Instruments; Wu, T.-D.; *Vlekken, J.; D'Olieslaeger, M.; De Schepper, L.; Limburgs Universitair Centrum, Belgium

Evaluation of the Energy Selection Optics of CAMECA IMS Instruments Using Fast Fourier Transforms (FFT); *Vlekken, J.; Wu, T.-D.; D'Olieslaeger, M.; Knuyt, G.; De Schepper, L.; Limburgs Universitair Centrum, Belgium

Fast Servicing of Duoplasmatrons; *Conlin, B. D.; IBM Analytical Services, Hopewell Junction, NY

Performing Low-Energy Ion Scattering Experiments on a CAMECA IMS-3f Secondary Ion Mass Spectrometer; *Franzreb, K.; Van der heide, P. A. W.; The University of Western Ontario, London, Canada

A Pulse Height Distribution Analysis of the Secondary Ion Mass Dependent Sensitivity Exhibited by Electron Multipliers; Van der heide, P. A. W.; *Fichter, D. A.; The University of Western Ontario, London, Canada

Graphical Programming for SIMS Data Acquisition and Analysis; *Sayers, J.E.; Cristy, S.S.; Lockheed Martin Energy Systems, Oak Ridge, TN

Recent Developments for the CAMECA TOF-SIMS IV; *Niehuis, E.; Heller, T.; Zehnpfenning, A.; Horreard, F.; Ion-ToF GmbH, Germany

PHI 6800 - Quadrupole SIMS for 200 mm Wafers; *Schueler, B. W.; Gemmill, J.; Reed, D. A.; Reich, F.; Physical Electronics, Redwood City, CA

Improved Chemical Characterization in Depth-Profiling of Environmental Material Using Kinetic Energy Distributions of Sputtered Ions; *Goschnick, J.; Sommer, M.; Forschungszentrum Karlsruhe, Germany

Anomalous High Sputtering Nonadditivity of Large Cluster Ions Under Molecular Bombardment of Metal; *Belykh, S.F.; Matveev, V.I.; Rasulev, U.Kh.; Samartsev, A.V.; Veryovkin, I.V.; Institute of Electronics, Uzebekistan

Low Energy Sputtering of Dimers from A_IIIB_V Semiconductors; *Kudriavtsev, Y.; Dorozshkin, A. A.; Kovarsky, A. P.; Ioffe Physical and Technial Institute, Russia

Sputter Yield of the Neutral Carbon Clusters; *Kudriavtsev, Y.; Ioffe Physical and Technical Institute, Russia

The SIMS Study of Cluster Ion Emission From Fullerite and Graphite Under Cesium Ion Bombardment; Dzhemilev, N. K.; Maksimov, S. E.; Solomko, V. V.; *Veryovkin, I. V.; Verkhoturov, S. V.; Arifov Institute of Electronics, Uzbekistan

Cluster Ion Emission from Copper under Alkaline Metal Ion Bombardment: Mass Distribution of Sputtered Clusters; *Veryovkin, I. V.; Adriaens, A.; Adams, F.; University of Antwerp, Belgium

Mass Distributions of Negative Cluster Ions of II-VI Semiconductors Detected by Time of Flight Secondary Ion MS; *Zhao, J.; Na, M. H.; Wood, T. D.; Gardella, Jr., J. A.; Luo, H.; SUNY, Buffalo, NY

Investigation of the Kinetic Energy Release Distributions of M_n ^± and M_nCs_m^- Clusters; *Dzhemilev, N.Kh.; Maksimov, S.E.; Solomko, V.V.; Veriovkin, I.V.; Institute of Electronics, Uzbekistan

A More Detailed Study of Cesium Effect on Secondary Ion Yield and Energy Distribution of GaAs; *Liangzhen, Cha; Qiji, J.; Youzheng, W.; Fenghua, S.; Dong, G.; Hongyu, Y.; Tsinghua University, China

Ionization Probability of Si⁺ and Ge⁺ from Clean Si and Ge Under Ar⁺ Ion Bombardment; *Huan, C.H.A.; Low, M.H.S.; Wee, A.T.S.; Tan, K.L.; National University of Singapore, Singapore

MCs⁺ and MCs₂⁺ Molecular Ion Emission from Pure Oxides M_xO_y; *Bieck, W.; Mootz, T.; Saldi, F.; Migeon, H.N.; Centre de Recherche Publique - Centre Universitaire, Luxembourg

Determination of Relative Work Function Shifts Due to Changes in the Cs Surface Concentration Using TOF-SIMS; Ferring, M.; *Mootz, T.; Saldi, F.; Migeon, H.N.; Centre de Recherche Public - Centre Universitaire, Luxembourg

A Study of Plasma Related Ion-Surface Interactions; *Gillen, D.R.; Graham, W.G.; Queen's University Belfast, United Kingdom

Is =Si-O Dangling Bond in SiO_x a Real Precursor for SiO⁺ Secondary Ion?; Efremov, A.A.; Romanova, G.Ph.; *Litovchenko, V.G.; Institute of Semiconductor Physics NAS, Ukraine`

Low Energy Argon Ions and Solids Interaction: The Flux of Secondary Argon Atoms; *Kudriavtsev, Y.; Kovarsky, A. P.; Ioffe Physical & Technical Institute, Russia

Uniform Description of Forming the Different Final Electron Configurations of Particles Sputtered From Metal Surfaces; *Sobolev, A. Y.; Slusarenko, Y. V.; Koval, A. G.; Kharkov State University, Ukraine

Ionization Probability of Atomic Particles Sputtered from Mo and Zr Surfaces at Various Oxygen Pressure; *Koval, A. G.; Gritsaenko, S. V.; Litvinov, V. A.; Kharkov State University, Ukraine

Effect of Rare-Earth Element on Secondary Ion Emission from Superconducting Oxides; *Chenakin, S. P.; Panichkin, I. Y.; Institute of Metal Physics, Ukraine

Emission of Secondary Alkali Ions from Alkali/Si Surfaces; *Yasue, T.; Ueyama, T.; Takada, M.; Li, R. S.; Koshikawa, T.; Electro-communication University, Japan

Layer Sputtering by Light Ions; *Teodoro, O.M.; Los, J.; Moutinho, A.M.C.; New University of Lisbon, Portugal

The Ionization Probability of the Secondary Species During the Sputtering of Iridium Silicides with Oxygen Ions; *Serrano, J.J.; Blanco, J.M.; Aguilar, M.; Rodriguez, T.; Ameziane, O.; Guzman, B.; Universidad Politecnica de Madrid, Spain

Investigation of Correlations Between Parameters Defining the State of Sputtered Particles; *Vlekken, J.; Croes, K.; D'Olieslaeger, M.; Knuyt, G.; Vandervorst, W.; De Schepper, L.; Limburgs Universitair Centrum, Belgium

Reconstruction of the Al^- Inverse Velocity Distribution from the Simulated Al^o Population; *Van der heide, P. A. W.; Karpuzov, D.; The University of Western Ontario, London, Canada

Atom Ejection from the Surface - Computer Simulation Predictions and Applications to SIMS and SNMS with Energy and Angular Resolution; *Elesin, V.A.; Samilov, V.N.; Moscow State University, Russia

On the Formation Mechanism of Secondary Hydride Ions from Group VB Metals; *Li-Fatou, A. V.; Dorozhkin, A. A.; Odom, R. W.; Charles Evans and Associates, Redwood City, CA

TOF-SIMS Measurements of the Oxidation State of Transition Metals; Chartogne, A.; *Saldi, F.; Bieck, W.; Migeon, H.N.; Centre de Recherche Publique - Centre Universitaire, Luxembourg

Superposition of Characteristic Decay Lengths by the Diffusion Model; Experiment and Simulation; *Cardenas, J.; Svensson, B.G.; Royal Institute of Technology, Sweden

Depth Profiling of ¹⁸O Tracer Diffusion in Reduced SrTiO₃ Using O₂ Secondary Ion Detection; *Zastrow, U.; Szot, K.; Research Centre Juelich, Germany

Diffusion of Silicon in Ion Implanted GaAs; *Likonen, J.; Ahlgren, T.; Slotte, J.; Raisanen, J.; Keinonen, J.; Technical Research Centre of Finland, Finland

Be and Si Migration in AlGaAs/GaAs Heterostructures During Molecular Beam Epitaxy; *Maier, M.; Gaymann, A.; Fraunhofer-Institute fur Angewandte Festkorperphysik, Germany

Deuterium Interactions with Si-SiO₂-Si Structures; *Boutry-Forveille., A.; Nazarov, A.; Ballutaud, D., LPSB-CNRS, France

A Study of Composition Distribution of Ti/AlN Interface using MCs⁺-SIMS Technique; *Wang, Y.; Chen, X.; Yue, R.; Chinese Academy of Sciences, China

Deconvolutions of Spatial and Size Distribution of Small SiO₂ Inclusions in Silicon from SIMS Depth Profiling; *Efremov, A.A.; Romanova, G.Ph.; Didenko, P.I.; Romanyuk, B.N.; Institute of Semiconductor Physics NAS, Ukraine

Applications of Deconvolution to SIMS Depth Profiles; *Dowsett, M. G.; Chu, D. P.; University of Warwick, UK

Reliability in the Deconvolution of SIMS Depth Profiles; *Gautier, B.; Dupuy, J. C.; Prudon, G.; Dubois, C.; Institut National des Sciences Appliquees de Lyon, France

Surface Morphology Development During Ion Sputtering; *Merkulov, A.; Merkulova, O.; Asomoza, R.; Centro de Investigacion y Estudios Avanzados del IPN, Mexico

Surface Topography on InP Produced by Ion Bombardment; *Homma, Y.; Higashi, Y.; Masamoto, A.; NTT Advanced Technology Corporation, Japan

Mechanism of Facet Formation on Ni Surface by Oxygen Ion Sputtering; *Kim, K. J.; Moon, D. W.; Jung, K.-H.; Korea Research Institute of Standards and Science, Korea

Atomic Force Microscopy Study of Sputter Induced Topography by Neutral Primary Beam SIMS; *Duemmler, W.; Maloufi, N.; Weber, S.; Tete, C.; Scherrer, S.; Ecole des Mines, France

Blistering Mechanism for Crater Formation at Ta/Si Interface by Oxygen Ion Beam; *Kim, K. J.; Moon, D. W.; Jeon, I. C.; Jung, K.-H.; Korea Research Institute of Standards and Science, Korea

Understanding Mixing Mechanisms by Quantitative Internal Profiling; *Vandervorst, W.; Tian, C.; Gomez, J.; Wu, T.D.; D'Olieslaeger, M.; Institute for Materials Research, Belgium

SIMS Round-Robin Study of Depth Profiling of Boron Implants in Silicon; *Okamoto, Y.; SHARP Corporation, Japan

Quantitative SIMS Depth Profiling of AlGaAs Complex Multilayers; *Liangzhen, C.; Youzheng, Z.; Youzheng, W.; Fenghua, S.; Dong, G.; Rong, L.; Tsinghua University, China

Simulator Calibration Using SIMS for Optimum Device Design of High Energy Implanted CMOS and BiCMOS Processes; *Stevie, F.A.; Chaudhry, S.; Chyan, Y.F.; McKinley, J.M.; Ma, Y.; Lucent Technologies, Orlando, FL

Characterization of Boron Implantations and Diffusion in Nitrogen Pre-Amorphized Silicon; *Harris, Jr., W.C.; Smith, H.E.; Soleimani, H.; Digital Equipment Corporation, Hudson, MA

Conditions for Accurate SIMS Depth Profiling of Indium Diffusions; *Miller, S.J.; Harris, Jr., W.C.; Smith, H.E.; Lee, Z.; Digital Equipment Corporation, Hudson, MA

Charge Compensation in High-Resistivity Insulator Analysis with Electron Bombardment by CAMECA IMS-4f; *Nakatsu, K.; Hatakeyama, S.; Saito, S.; Sumika Chemical Analysis Service, Ltd, Japan

Use of Molecular Negative Primary Ions for the Depth Profiling of Insulators: Na in SiO₂; *Simakin, S.G.; Institute of Microelectronics RAS, Russia

SIMS on Beveled Semiconductors Heterostructures; *Merkulov, A.; Asomoza, R.; Ber, B.; Centro de Investigacion y Estudios Avanzados del IPN, Mexico

SIMS Analysis of Thin Film Superconducting Multilayers Using a FIB 200 Micro-Sectioning Technique; *Montgomery, N.J.; McPhail, D.S.; Chater, R.; Dingle, T.; AEA Technology, United Kingdom

Depth Profiling of the Doped Element in a Micro Particle by Ga⁺ Focused Ion Beam SIMS; *Tomiyasu, B.; Komatsubara, H.; Satoh, M.; Sakasegawa, S.; Owari, M.; Nihei, Y.; University of Tokyo, Japan

Disappearance Cross Sections of Ammonium Adsorbates on Environmental Surfaces; Groenewold, G. S.; *Appelhans, A. D.; Gianotto, A. K.; Olson, J. E.; Ingram, J. C.; Delmore, J. E.; Idaho National Engineering Laboratory, Idaho Falls, ID

Determination of KCl in Sintering Furnace Dust in the Iron Industry; *Oishi, S.; Murayama, J.; Tanaka, H.; Kusama, K.; National Institute for Resources and Environment, Japan

Calibration of Depth Profiles of Environmental Material Obtained with Plasma-Based SNMS; *Goschnick, J.; Schuricht, J.; Sommer, M.; Forschumgszentrum Karlsruhe, Germany

Industrial TOF-SIMS: From Fundamental Studies to Failure Analysis, Reihs, K., Bayer AG, Germany

Applications of Time-of-Flight SIMS in the Chemical Industry; *Lloyd, K. G.; Stika, K. M.; Swartzfager, D. G.; E. I. DuPont de Nemours & Co., Wilmington, DE

TOF-SIMS Characterization of Surface-Adsorbed Contaminants in Semiconductor Manufacturing; *Gates, J. K.; Catmull, K.; Goldstein, L.; Livingston, J.; Motorola, Chandler, AZ

Practical Time-of-Flight Secondary Ion Mass Spectrometry in Disk Media Industry: Quantitative Approaches; *Huang, L.; Hung, Y.; Chang, S.; Seagate Recording Media, Milpitas, CA

Applications of TOF SIMS Imaging in Polymer Processing; *Weng, L.T.; Feng, J.; Zhu, S.H.; Lo, H.H.K.; Chan, C.-M.; Hong Kong University of Science and Technology, Hong Kong

Secondary Electrons and the Interpretation of Static Secondary Ion Mass Spectra; *Spool, A. M.; IBM Storage Systems Division, San Jose, CA

TOF-SIMS Determination of Polymer Molecular Weights Using Fragment Ions; *Galuska, A. A.; Exxon Chemical Company, Baytown, TX

Detection and Quantification of Drugs Using TOF-SIMS; *Saldi, F.; Schneider, S.; Wennig, R.; Migeon, H.N.; Centre de Recherche Publique - Centre Universitaire, Luxembourg

Molecular Weight Dependent Fragmentation of Deuterated Polystyrene in Static SIMS; *Vanden Eynde, X.; Reihs, K.; Bertrand, P.; Universite Catholique de Louvain, Belgium

Improvement of Signal Intensity in TOF-SIMS through Halide Additives and Halide Substrate Surface Modification; *Gusev, A.; Choi, B.; Hercules, D. M.; Vanderbilt University, Nashville, TN

Biological Material Analysis by Matrix-Enhanced SIMS; *Wu, K. J.; Odom, R. W.; Charles Evans & Associates, Redwood City, CA

Competitive Cationization in TOF-SIMS Spectra of Histidine Containing Biologically Active Molecules; *Keller, B.A.; Hug, P.; Swiss Federal Laboratories for Materials Testing and Research, Switzerland

TOF-SIMS and XPS Study of Thin Multilayered Coatings Realized by Successive Adsorption and Functionalization of Charged Polymer Layers; *Delcorte, A.; Bertrand, P.; Wischerhoff, E.; Laschewsky, A.; Catholic University, Belgium

Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) Study of Hydrolysis of Poly (glycolic acid); *Chen, J.; Hernandez, N.L.; Gardella, J.A.; State University of New York, Buffalo, NY

Ion Formation Mechanisms of Tertiary Structures of Polymers in Time of Flight Secondary Ion Mass Spectrometry; *Nowak, R. W.; Gardella, Jr., J. A.; Wood, T. D.; Zimmerman, P. A.; Hercules, D. H.; State University of New York, Buffalo, NY

Artifacts in SIMS Depth Profiling, *Vandervorst, W., IMEC, Belgium

Ion Beam Induced Nitridation and Oxidation of Silicon; *Petravic, M.; Williams, J. S.; Svensson, B. G.; Conway, M.; Australian National University, Australia

Transient Ion Yield Changes and Depth Resolution in Ultralow-energy Depth Profiling of As in Si Using Primary Ions at Oblique Incidence; *Patel, S.B.; Wittmaack, K.; Atomika Instruments, Germany

Measurement Artifacts in SIMS Depth Profiles of SiGe Layers in Si; *Van Berkum, J.G.M.; Zalm, P.C.; Badheka, R.; Philips CFT, The Netherlands

Modeling of Bombardment Induced Oxidation with and without Flooding; *De Witte, H.; Vandervorst, W.; Gijbels, R.; University of Antwerp, Belgium

SIMS Quantification of High-dose BF₂⁺ - Implanted Silicon; *Tada, Y.; Kataoka, Y.; Fujitsu Laboratories, Ltd, Japan

Quantification of Ge in Strained and Relaxed Si_1-xGe_x Layers; *Newey, J.P.; Houlton, M.R.; Robbins, D.J.; Defense Evaluation Research Agency, United Kingdom

Improvement of Precision in Quantitative Analysis by Adjustment of Tilt Angle and Distance from Immersion Lens of Samples in a Magnetic Sector Type Instrument; *Hatada, M.; Yamada, K.; Hitzman, C.J.; Ishitani, A.; Toray Research Center, Japan

The Use of the Infinite Velocity Method to Ascertain Concentration Profiles and Ion Yield Variations in O Implanted Zr Alloys (Zr-Nb 2.5 wt%); *Van der Heide, P. A. W.; Karpuzov, D.; Khatamian, D.; The University of Western Ontario, London, Canada

Quantitative Depth Profiling of Ti-N-C-O Coating Materials Using MCs⁺-SIMS; *Willich, P.; Bethke, R.; Fraunhofer Institute for Surface Engineering and Thin Films, Germany

Quantitative SIMS Analysis of Surface Layers of Cubic Silver Halide Microcrystals: Comparison of Different Quantification Methods; *Verlinden, G.; Gijbels, R.; Geuens, I.; University of Antwerp, Belgium

Automated (unattended) TOF-SIMS Analysis; *Reich, F.; Schueler, B. W.; Register, R. A.; Xiao, H.; Coveney, P.; Huesemann, A.; Physical Electronics, Redwood City, CA

New Developments for an Improved Automation of the CAMECA IMS 6F; *Renard, D.; Rasser, B.; Schuhmacher, M.; CAMECA, France

Problem Solving Applications of a Low Cost, Fully Automated SIMS Chemical Microscope; *Eccles, A. J.; Steele, T. A.; Millbrook Instruments Ltd, UK

Mass Spectroscopy of Recoiled Ions (MSRI) for Insitu and Exsitu Analysis of Thin Films and for Realtime Control of Growth Parameters; *Schultz, J.A.; Ionwerks, Houston, TX

A Novel Electron Beam SNMS Device for CAMECA Dynamic SIMS Instruments; Ecker, P.; *Bieck, W.; Rasser, B.; Migeon, H.N.; Centre de Recherche Publique - Centre Universitaire, Luxembourg

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