Return to SIMS Meetings
SIMS Workshop 2000

Tentative Program, 13th Annual Workshop on SIMS, April 30 - May 3, 2000

Note: This is our working copy of the technical program. Session times and speakers are subject to change without notice. Due to a large number of  abstract submissions this year,  not all requests for oral presentations could be accommodated….sorry about that.

Sunday Evening April 30, 2000

7:00 PM — 10:00 PM Opening reception and registration

Monday, May 1, 2000

7:30 AM - 8:00 AM Continental Breakfast

8:00 AM - 8:15 AM Welcome and Introductions

8:15 AM - 8:45 AM Plenary Talk: The History of SIMS in the USA, Peter Williams, ASU

8:45 AM - 9:15 AM Plenary Talk: SIMS Depth Profiling, Things your Mother Never Told You, Fred Stevie, Lucent Technologies.

9:15 AM - 9:45 AM Plenary Talk: Molecular Dynamics Simulation of keV Particle Bombardment, Kristin Krantzman, Department of Chemistry, College of Charleston

9:45 AM - 10:15 AM Morning Break

10:15 - 11:45  AM Technical Session 1- Metrology Challenges for the New Millenium (Chair: Jerry Hunter, Accurel Systems)

Ann Waldhauer, Applied Materials, Metrology for Silicon Germanium Epitaxy

Noble Johnson, Xerox PARC, Blue Laser Diodes- Materials Issues in Relation to Device Performance

Lei Zhu, Data Storage Institute, University of Singapore Study of Lubricant Thickness and Impurity on Magnetic Media by Secondary Ion Mass Spectroscopy

Ken Willey,  Atom Sciences, Inc, DNA Diagnostics by TOF SIMS


11:45 AM - 12:45 PM Lunch

12:45 PM - 1:30 PM Technical Session 2- Introduction to the Research Activities of US SIMS Labs-
Short presentations will be given on the capabilities and research interests of major US SIMS research labs.

1:30-1:45  PM - SIMS Workshop Business, ASTM Meeting

1:45 PM - 3:15 PM Technical Session 3 -Insulator/Geological/Isotopic Analysis  by SIMS (Chairs: Al Fahey, NIST and Kevin McKeegan, UCLA)

Kevin McKeegan, UCLA, High precision isotope ratio measurements with a multiple collector SIMS

Rick Hervig, Arizona State University, O2-: Maximizing the Current and Applying it to Geological and Semiconductor Samples

Albert Fahey, NIST,  Elemental and Isotopic Analysis of Geological and Insulating Samples  by TOF -SIMS

Edward P. Vicenzi, Smithsonian Institution, High Spatial Resolution Elemental Imaging of Natural Materials using the Focused Ion Beam SIMS



3:15 PM - 3:30 PM Afternoon Break

3:30 PM - 5:00 PM Technical Session 4- New Developments for SIMS (Chair TBD)

Robert Odom, Charles Evans and Associates, Real Time, In-Situ Depth Measurement of Sputtered Craters 

Fred Stevie, Lucent Technologies, Sample for Electron Beam Detection and Alignment

Lucille Giannuzi, University of Central Florida, Multidisciplinary Approach to the Understanding of Ion Induced Sputter Roughening

Igor Veryovkin, Argonne National Lab, Formation of Time-of-Flight Spectra of Sputtered Particles:  A Comparison Between Experiments and Three-Dimensional Computer Simulations

5:00 PM - 6:30 PM Free Time/Instrument Company Sponsored User Meetings

6:30 PM - 7:00 PM Social Mixer

7:00 PM - 10:00 PM Vendor Banquet- Short After Dinner Presentations by Companies on their Newest Products
Presentations To be Given By (as of 4-4-2000)

Accurel Systems International Corp.

Atomika Instruments GmbH


Peabody Scientific

Physical Electronics Inc.

Tuesday  May 2, 2000

7:30 AM - 8:00 AM Continental Breakfast

8:00 AM 1 9:30 AM Technical Session 5- Semiconductor Applications of Time-of-Flight SIMS (Chair: Steve Hues, Motorola)

Scott Bryan, Physical Electronics,  Trace Metal Analysis of Silicon Wafers by TOF-SIMS

Steven Hues, Motorola, MOS-13  Real World Use of TOF-SIMS in a Semiconductor FAB

J.J. Lee, Motorola, APRDL  TOF-SIMS Detection of Organic Contamination in Semiconductor Wafer Fabrication

Ian Mowat, Charles Evans and Associates, Quantitative Aspects of the Surface Analysis of Metals on Si

9:30 AM - 1 10:00 AM Morning Break

10:00 AM 111:30 AM Technical Session 6- Vendor Technical Session (Chair: Mark Woods, ARL)

Michel Schuhmacher, Cameca Instruments, On-Line Crater Depth Measurements on a Magnetic Sector SIMS

S.B. Patel, Atomika Instruments America, Analysis of Small Areas using Low Energy SIMS

F. Reich, Physical Electronics, Recent Developments in SIMS at Physical Electronics

11:30 AM - 12:30 PM Lunch

12:30 PM - 2:00 PM Technical Session 7 - New Approaches for SIMS/Surface Analysis (Chair: Pat Lindley, Charles Evans and Associates)

Steve Pachuta, 3M, Chemically-Nondestructive Depth Profiling Using Combined AFM/SIMS and Laser Desorption/SIMS

Claude Lechene, Harvard University, Biological SIMS Using the NanoSIMS 50

 Rainer Loesing, North Carolina State University, Investigation of Low Energy CsC6- for Ultra Shallow Depth Profiling

Thomas Grehl, ION-TOF,  A New Cs-Xe Co-sputtering Technique for Ultrashallow Depth Profiling


2:00 PM — 3:30 PM Technical Session 8 - Quantitation SIMS/Depth Profiling (Chair: Richard Lareau, FAA)

Charles W. Magee, Evans East, Precision and Accuracy in SIMS Depth Profiling:  What is the Difference and What are the Limitations?

Jennifer McKinley, Lucent Technologies, Quantification of Varying Dose Implant Standards of P, F, and B in SiO2 for Quantification of Highly-Doped Oxides

Richard Lareau, Federal Aviation Administration, In Situ Ion Implantation for Quantitative SIMS Analysis of Wide-Band  Gap Device Structures  

Stefanie Walz, University of Freiburg, Germany, Elemental Composition Analysis of Semiconductors, Metallised Polymers, and Ceramics by Laser-SNMS

Bruno W. Schueler, Physical Electronics, Surface Metal Standards Produced by Ion Implantation through a Removable Layer


 3:30 PM — 5:00 PM Technical Session 9 - Poster Session

1. Recep Avci, Montana State University, Application of ToF SIMS to Studying Surface Diffusion

2. R. Brindos, University of Florida, Quality Control and Consistency Checks When Using SIMS to Determine the Interactions between Arsenic, Germanium, and Silicon Intersitials

3. S. F. Belykh, Academy of Sciences of Uzbekistan,  Non-Additive Sputtering of Silicon as Positive Cluster Ions Under Polyatomic Ion Bombardment


4. John B. Cliff,  Oregon State University, Quantifying and Imaging N in Soils at Microbially Meaningful Scales using TOF-SIMS:  Preliminary Results


5. Chris Diehnelt, Texas A&M University, The Projectile Efficiency Number:  A Comparative Tool for Atomic and Polyatomic Primary Ion Selection


6. Robert D. English, Texas A&M University,  Characterization of Biologically Relevant Molecules with Fixed Anionic Charge Sites using an Aminoethanethiol Self-assembled Monolayer Substrate and SIMS


7. Michael Geva, Lucent Technologies,  SSRM – A Complementary Analytical Technique to SIMS


8. G. M. Guryanov,  North Carolina State University, Depth Profiling of Fe and Cu in MeV Implant Gettered Epitaxial Silicon Layers 


9. Philippe Holliger, Cameca, Depth Profiling of Ultra Shallow As-implants in Si using MCs+ and MCs2+


10. Marc Juhel, STM Microelectronics,  TOF-SIMS Depth Profiling of Thin Oxynitride Film with MCs+ Ions


11. Wendy J. Justison, E.I. Dupont de Nemours, Exploring the Combination of HPLC/SEC with ToF-SIMS


12. G. F. Kessinger, INEEL, High Temperature Condensed Phase Mass Spectrometric Analysis


13. Patrick Keyes, University of Florida,  Using SIMS to Understand Transient Enhanced Diffusion Mechanisms


14. Jong Kim, University of Cincinnati, Application of Secondary Ion Mass Spectrometry and Gel Permeation Chromatography in Monitoring the Brass Sulfidization Reaction


15. Unchul Lee, US Army Research Lab,  Investigation of Anomalous n-type Behavior in LWIR MBE Grown Hg1-xCdXTe Using Secondary Ion Mass Spectrometry (SIMS)


16. Jennifer McKinley, Lucent Technologies,   Line Scan Quantification of Metal-Implanted Si Samples


17. Shane Phillips, North Carolina State University,  Evaluation of Optical Profilometry for Measurement of Ultra Shallow SIMS Craters


18. Patrick Schnabel, Charles Evans and Associates, Comparison of ToF-SIMS and TD-GC/MS Detection Limits for the Analysis of Organic Contamination on Wafer Surfaces


19. Igor Veryovkin, Argonne National Lab, A Near-future Perspective of Computer Simulations of Ion Optics:  Introducing a Virtual Instrument


20 W. Vandervorst, IMEC, Influence of Oxygen on the Analysis of Oxynitrides: N-Diffusion or Ionization


21. A. T. S. Wee, University of Singapore, Depth Resolution and Surface Roughening in Ultra Shallow SIMS Depth Profiling

22. Ming Hong Yang, Charles Evans and Associates, Accurate Near Surface Carbon Measurements Using Deconvolution Methods  

23. Vladimir S. Zaitsev, Queens College,  TOF SIMS Imaging of Multicomponent Polymer Blends

24. V. Zinoviev , Academy of Sciences of Uzbekistan,  The Use of a Silicon Cluster Ion Source with CAMECA IMS 4f Instrument

25. Greg Gillen, NIST, Carbon Cluster Primary Ion Beams for SIMS

26. Greg Gillen and Albert Fahey, NIST, Preliminary Evaluation of an UltraFast Resistive Anode Encoder for SIMS Imaging Applications

27. Peter Chi, NIST, High Precision Measurements of Arsenic Implantation Dose in Silicon by SIMS

28. Sonya Roberson, NIST , TBD


5:00 PM — 8:30 PM Lake Tahoe Dinner Boat Cruise (Ski Run Marina)

Wednesday  May 3, 2000

7:30 AM — 8:00 AM Continental Breakfast

8:00 AM — 9:45 AM Technical Session 10 -  Mechanisms of Molecular Desorption/Polyatomic Primary Ion Beams for SIMS (Chairs, Greg Gillen and Mike VanStipdonk)

Dietmar Staple, University of Muenster, SIMS of LB Films and Polymers using Polyatomic and Atomic Ions

Kuang Jen Wu, Charles Evans and Associates, Highly Charged Ions for Organic SIMS

A. Delcorte, Pennsylvania State University, KeV Particle Induced Emisssion and Fragmentation of Organic Molecules: Ejection Mechanisms and High Sputtering Events

Robert English, Texas A&M University, Polyatomic Projectiles on Self Assembled Monolayer Surfaces

Alger Pike, Pennsylvania State University, Fragmentation of Organic Molecules Desorbed from Surfaces

9:45 AM — 10:00 AM Morning Break

10:00 AM — 12:20 PM Technical Session 11  - Polymer Characterization by SIMS (Chair: Sonya Roberson, NIST)

David Castner, University of Washington,  Characterization of Adsorbed Proteins with Static ToF-SIMS

David Abmayr, Exxon, TOF-SIMS Imaging: Along the Polymer Delivery Chain

Birgit Hagenhoff, TASCON GmbH, SIMS Spectra of Polymers: A  Stepwise
 Appoach to Interpretation

Joo-Woon Lee,SUNY Buffalo,  A New Approach to the Direct Surface Determination of Biodegradable Polymers: in vitro Hydrolytic Degradation Study of Poly(glycolic acid) using Time-of-Flight Secondary Ion Mass Spectrometry (ToF SIMS) and Differential Scanning Calorimetry (DSC)

Pat Lindley, Charles Evans and Associates, Polymer Characterization using TOF-SIMS

Kathy Lloyd, DuPont,  Chemometric Methods for Surface Spectroscopic and Image Data Analysis, or How PCA can reveal what mere mortals cannot see (or are too lazy to ask for) 

12:20 PM Closing Remarks