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Tentative Program, 14th Annual Workshop on SIMS,

May 13 - May 16, 2001



Note: This page will be updated as the program is developed. Session times and speakers are subject to change without notice (updated  4/26/2001).




7:00-10:00  PM  Opening reception, Mohave-Navajo Rooms, registration and exhibit setup



MONDAY, MAY 14, Mohave-Navajo Rooms                                      

7:30 - 8:00 AM   Continental Breakfast


8:00 - 8:15 AM Welcome and Introductions



8:15 -10:30 AM Plenary Session  (Chair:  Peter Williams,ASU)


8:15 - 9:00 AM  "Sputtered Ions and Charged Particle Optics: a few milestones in their past and present relationship", Prof. Georges Slodzian, Professeur Emérite, à l'Université de Paris-Sud, Laboratoire de Physique des Solides, Orsay, France 


9:00  -  9:30 AM  "Array Detectors in Mass Spectrometry - Past, Present & Future" , - M.B. Denton, University of  Arizona


9:30 - 10:00 AM  Ion Optics Design Issues of a High Temperature Multiple Ionization Mode Mass SpectrometerDavid A. Dahl, INEEL 



10:00 - 10:30 AM  Morning Break



10:30 – 11:50 AM   Advances in Semiconductor SIMS Analysis (Chair: Joe Bennett, International Sematech)

10:30 - 10:50 AM    “Analysis of Si/Ge Materials by SIMS”, Jerry Hunter, Accurel Systems


10:50 - 11:10 AM   Optimizing Depth Resolution, Dynamic Range, and Data Density in TOF-SIMS Depth Profiling”, Scott Bryan and Frasier Reich, Physical Electronics


11:10 - 11:30 AM   “Advantages of Using Low Energy SIMS for New Semiconductor Technologies”, Erika Duda, Motorola.


 11:30 - 11:50 AM  Backside Polishing Sample Preparation Techniques for Backside SIMS”, Ed Hirsch, Allied High Tech Products



11:50 AM - 1:00 PM  Lunch



1:00 – 3:00 PM  Earth and Planetary Applications/Instrumentation 1 (Chair: Ed Vicenzi, Smithsonian Institution)

1:00- 1:20 PM. "Microbeam laser resonant ionization mass spectrometry for isotopic compositions of individual grains of stardust", Andrew Davis, U. of Chicago


1:20- 1:40 PM "Isotopic analysis of high and low temperature components of Tagish Lake: Anatomy of a new, very primitive carbonaceous chondrite", Laurie Leshin, ASU   


1:40- 2:00 PM "ZrSiO4, Nature's near perfect time capsule: A combined Time of Flight and Magnetic sector SIMS Study", Edward Vicenzi, Smithsonian Institution


2:00 – 2:20 PM "Topics from the ASU SIMS Lab: Quantifying hydrogen in silicate glasses by ion implantation and monitoring surface chemistry variation during sputtering using ion scattering spectroscopy", Rick Hervig, ASU


2:20- 2:40 PM "Development of a "Hybrid" Large-Radius Ion Microprobe Mass Spectrometer", Erik Hauri, Carnegie Institution of Washington


2:40- 3:00  PM "Design aspects of a recombinator - tandem SIMS instrument for analysis of captured solar wind", Kevin McKeegan, UCLA



3:00 - 3:30 PM Afternoon Break



3:30 – 5:00 PM Advances in SIMS Instrumentation 2  (Chair: Bruno Schuler, Physical Electronics)                                                                                                

3:30- 3:50 PM  "Highly Efficient Extracting Ion Optics For Time-Of-Flight SIMS/SNMS

Instruments", I. V. Veryovkin, Argonne National Lab


3:50- 4:10 PM  A Magnetic Sector SIMS with Ultra Low Energy Capabilities for Negative Secondary Ion Analysis”, Michel Schumacher, Cameca


4:10-4:30 PM  The development and the use of a sputter cluster ion  source for SIMS analysis”,.S.F.Belykh, University of Antwerp


4:30-4:50  PM  "Characterization of Electron Multiplier Post Acceleration using  Pulse Height Distributions"

Albert Fahey, NIST



4:50 - 6:30 PM Free Time/Instrument Company Sponsored User Meetings



6:30 - 7:00 PM Social Mixer  


7:00 - 10:00 PM Vendor Sponsored Banquet, Hotel Banquet Room


After Dinner Presentations by Companies on their Newest Products (Session Chair - Lanny Brown, Atomika)

Presentations to be given by: (current as of 4-18-01):


Atomika Instruments

Cameca Instruments

Evans Analytical

Physical Electronics




TUESDAY MAY 15, Mohave-Navajo Rooms

7:30 - 8:00 AM Continental Breakfast



8:00 – 9:30 AM Depth Profiling/Surface Analysis  (Chair: Wendy Morinville, Micron Technology )                                                                 

8:00 – 8:20 AM  Transient effects in Cesium primary ion beam depth profiling of Silicon at high incidence angles”.

P.A.W. van der Heide,  University of Houston


8:20-8:40 AM  Characterization of Dopant and Metal Diffusion in Thin Dielectrics with Low Energy SIMS”, J. Jiang, Motorola


8:40- 9:00 AM  Characterization of Thin Tin Films by SIMS, XRD and XPS”, Andrei V. Li-Fatou,

Texas Instruments


9:00 – 9:20 AM “Onset of Roughening-Induced Ion Intensity Changes in Si Under O2+ Bombardment”

Joe Bennett, International Sematech



9:20 - 9:50 AM Morning Break



9:50-10:10  AM  Analysis of the Kitchen Sink by SIMS -Part 2”, Alan Brown, CSMA


10:10-10:30 AM  Mass-Resolved Low-Energy Back-Scattering of Alkali Ions”, Klaus Franzreb, ASU




10:30 – 11:50 AM Vendor Technical Session (Chair: Rowland Hill, Ionoptika)    

10:30-10:50AM Quadrupole SIMS Tools by Atomika Instruments, S.B. Patel, Atomika Instruments America

10:50-11:10 AM  Physical Electronics - no abstract yet

11:10- 11:30 AM Cameca - no abstract yet

11:30-11:50 AM  Ion TOF - no abstract yet


11:50 - 1:00 PM Lunch



1:00 – 2:00 PM Introduction to the Research Activities of SIMS Users Laboratory

Short presentations will be given on the capabilities and research interests of major SIMS research labs.



2:00-2:30 PM    SIMS Workshop Business, ASTM Meeting

Site selection for next year, ASTM practice, SIMS WWW page, financial report, next international SIMS conference



2:30– 3:30 PM  Discussion on Standards for SIMS (Chair: Dave Simons, NIST)  



3:30 – 5:00 PM Poster Session, Cactus Ballroom                                                

1. “Roughness Reduction on Depth Profiling of Cu Films with Sample Rotation"

Peter Chi, NIST


2. "TOF-SIMS in Combinatorial Methodology: Searching Compositional Space"

Sonya Roberson, NIST


3. "Sputtering By Polyatomic Projectiles: What Kinetic Energy Spectra Of

Secondary Ions Can Tell About Non-Additivity Of The Process"

S. F. Belykh, V. V. Palitsin, A. Adriaens, F. Adams, A. V. Zinoviev, and

I. V. Veryovkin


4. "An Ultra-Sensitive Time-of-Flight Mass Spectrometer for Quantitative

Surface Analysis" I. V. Veryovkin, Argonne National Lab


5.  “The effect of the electronic subsystem excitation on the ionization probability of atoms sputtered from metals by atomic and molecular projectiles” S.F.Belykh,  I.A.Wojciechowski, V.V.Palitsin, A.V.Zinoviev, A.Adriaens and F.Adams


6. “Accessing Sputter Rate Changes in the Transient Zone with Optical Profilometry”, Rainer Loesing, North Carolina State University

7. “Dependence of the Retained Cs Concentration on Incidence Angle for a 1 keV Ion Implantation into Si(100)”, C. Lupu, University of Houston


8.  NanoSIMS 50:Sub-Micron Isotopic and Elemental Analysis” F. Horreard, Cameca


5:00 — 8:30 PM          Rawhide Western Outing…

Buses will begin departing at 5:00 PM from rear entrance of hotel.



WEDNESDAY MAY 16, Mohave-Navajo Rooms

7:30 - 8:00 AM   Continental Breakfast


8:00 – 9:30 AM   Secondary Ion Microscopy (Chair: Kathy Lloyd, Dupont)             


8:00-8:20 AM  Imaging Organic Materials using TOF-SIMS., Anna Belu, Physical Electronics


8:20-8:40 AM  Biological SIMS using the NanoSIMS 50, Claude Lechene, Harvard University


8:40-9:00 AM   “Imaging SIMS of High Explosive Particles”, Greg Gillen, NIST and Richard Lareau, FAA



9:00- 9:30 AM    Morning Break



9:30– 10:50 AM Organic/Materials  Characterization by SIMS (Chair: Michaeleen Pacholski, Rolm and Hass)                                                                                      


9:30 –9:50 AM PLS Analyses of TOF-SIMS Spectra of Lubricants on Magnetic Recording Disks

A.M. Spool, IBM Corporation, San Jose CA


9:50-10:10 AM Quantitative Determination of Low-surface-concentration Chemical Degradation Rates on Concrete using Ion TrapSIMS, Tony Appelhans, Idaho Falls


10:10-10:30 AM  The Investigation of the Influence of H2O Partial Pressures on the Secondary Ion Yield of OH- and O- in Al2O3 films using TOF-SIMS, James A. Ohlhausen, Sandia National Lab


10:30-10:50 AM Correlation of Adhesive Tests and TOF-SIMS Chemical Analysis for Low K Integration, J.J. Lee, Motorola




10:50 – 12:30 AM   Quantitative Analysis (Chair: TBD)                                     


10:50-11:10 AM “Quantitative Determination of Dopant Dose in Ultra-Shallow Implants using the Lexes Technique; Comparison with SIMS Results”, Michel Schumacher, Cameca

11:10-11:30 PM “SIMS Dose Mapping Data on Full Wafers”, S.B. Patel and J. McPherson, Atomika Instruments America

11:30-11:50  PM  “A Surface Metrology Tool for Patterned and Unpatterned Wafers”, B. W. Schueler, D. F. Reich, Charles Evans & Associates

11:50-12:10 PM “Quantification of SiGe Using Quadrupole SIMS”, T. McDaniels and Mac Robinson, Lawrence Semiconductor Research Laboratory, Inc.Tempe, AZ


12:10 PM Closing Remarks




Location for Exhibitors:  Cactus Ballroom