Return to SIMS Meetings
15th Annual Workshop on
Secondary Ion Mass Spectrometry
Belleview Biltmore Conference
Center
Clearwater Beach , Florida
April 29- May 2,
2002
Organizing Committee:
Greg
Gillen, NIST - Chairman
Steven
Hues, Motorola - Chairman
Richard Lareau,
Transportation Security Administration - Chairman
Technical Program
Monday
Evening, April 29, 2002
7:00-10:15 PM
Opening reception, registration and exhibit setup
Tuesday, April 30, 2002
7:30 -
8:00 AM Continental Breakfast
8:00 - 8:15 AM Welcome
and Introductions
Plenary Session (Chair: Workshop Organizers)
8:15 -
8:45 AM “Mass Spectrometry in the
Marine Environment: Attempting to Imitate Fish", Tim Short, Center for
Ocean Technology,
8:45 -
9:15 AM "A Microscopic View of Organic SIMS”, Arnaud Delcorte,
PCPM, Universite
9:15
-10:15 AM “Near-surface
and Interfacial B-Profiling: An (un)solvable Problem in SIMS” Wilfried Vandervorst, IMEC,
10:15 -10:45 AM
Morning Break
Advances in Semiconductor SIMS Analysis (Chair: Joe
Bennett, International Sematech
10:45 - 11:05 AM “Improved Near Surface SIMS Characterization of Shallow Boron Implants
into Si”, Temel H. Buyuklimanli, Evans East
11:05 - 11:25 AM “Depth Scale Calibration Procedure
for SIMS Analysis of Graded Si(1-x)Gex
Heterostructures”, A. Budrevich, Intel Corp,
11:25 - 11:45 AM “Arsenic Shallow Implant Characterization by
Magnetic Sector and TOF-SIMS Instruments, D. Giubertoni, ITC-irst, Italy
11:45
-12:05 PM “Quantitative
Considerations for the SIMS Analysis of SiGe Compounds”, Jerry Hunter, Accurel
12:05 -
12:25 PM “Comparative Study of Nitrogen and Oxygen
Quantification in Oxynitride Films Using LEXES, SIMS and NRA Techniques”, C.
Hombouger,
12:25 - 1:20 PM Lunch
SIMS for
Isotopic and Geological Analysis (Chair: Albert Fahey, NIST)
1:20- 1:40
PM "A Comparison of SIMS and
LA-ICP-MS for Geochemical
Microanalysis:
The Determination of Sr/Ca in Biogenic Aragonite", Graham Layne, Woods
Hole
1:40- 2:00
PM "Matrix
Effects in Hydrogen Isotope Analysis of Silicate Glasses by SIMS”,
Erik
Hauri, Carnegie Institution
2:00 - 2:20 PM "The
IMS-1270 at NIST: Delivery Experiences and an Initial Report of
Measurements" Albert Fahey, NIST
2:20 - 3:00 PM Afternoon
Break
Organic
Analysis/TOF SIMS (Chair: Michaeleen
L Pacholski, Rohm
and Haas)
3:00 - 3:20 PM “Controlling Metallic
Contacts to Self-Assembled Monolayers and Molecular Electronic Devices”, Amy Walker,
3:20 - 3:40 PM “Probing Lipid Diversity with Time of Flight Secondary Ion Mass Spectrometry”, Sara Ostrowski,
3:40 - 4:00 PM “Is Static TOF-SIMS Useful for Probing the Composition of Multicomponent
Adsorbed Protein Films?”, Matt Wagner, University of
Washington (student
award winner)
4:00 -
4:20 PM “Time-of
Flight Secondary Ion Mass Spectrometry Analysis of Conformational Changes in
Adsorbed Protein Films”, Nan Xia, University of Washington (student award
winner)
4:20 - 6:30 PM Free
Time/Instrument Company Sponsored User Meetings
6:30 - 7:00 PM Social Mixer
7:00 - 10:00 PM Vendor
Sponsored Banquet and After Dinner Presentations Chairs: Fraser Reich, Kore Technology and Fred
Stevie, NC
Ionoptika
ION TOF
Microphotonics - “Design, Development and Applications of a
Low-Cost Benchtop Imaging SIMS Instrument”, A.J. Eccles, Millbrook Instruments
Cameca Instruments
Evans Analytical Group - “SIMS
Used as a Process Monitoring and Troubleshooting Tool for Compound
Semiconductor Epitaxial Growth, Temel H. Buyuklimanli, Evans East
Physical Electronics
7:30 - 8:00 AM Continental Breakfast
FIB SIMS / Secondary Ion Imaging (Chair: Greg Gillen,
NIST)
|
FIB SIMS / Secondary Ion Imaging (Chair: Greg Gillen, NIST) |
8:00-8:30
AM “A Review
of Focused Ion Beam Secondary Ion Mass Spectrometry (FIB-SIMS)”(Tutorial), F.
Stevie,
8:30-8:50 AM “Applications of a Novel SIMS-FIB Instrument
in SIMS Image Depth Profiling”, Greg McMahon, Fibics Corp,
8:50-9:10
AM “The Extension of Spectrum Imaging and Multivariate
Statistical Analysis in TOF SIMS to multiple dimensions”, Tony Ohlhausen,
Sandia National Lab
9:10-9:30 AM
“Molecular Imaging Using Atomic and Molecular Primary
Ions”, Ewald Niehuis, ION-TOF GmbH,
9:30- 9:50
PM
“Applications of Large Area Imaging by TOF-SIMS”, Scott Bryan, Physical Electronics,
9:50 - 10:20 AM Morning Break
Vendor Technical Session (Chair: Fraser Reich, Kore
Technology)
10:20-10:40 AM Physical Electronics “Comparison of TOF-SIMS and XPS for SiON Gate Oxide
Metrology”, S. Bryan, Physical Electronics,
10:40-11:00
AM Cameca Instruments “Recent Results on the Cameca Nano SIMS 50:
Cosmochemistry, Biology and Materials Application”, Francois Horreard, Cameca,
11:00-11:20
AM ION TOF -
11:20-12:00 PM SIMS
Workshop Business, ASTM Meeting, Planning for SIMS XIV
Site selection for upcoming years, ASTM SIMS meeting, report on new
management company, next international SIMS conference, SIMS Listserver and WWW
page.
12:00 – 1:00 PM Lunch
Depth Profiling/Quantitative Analysis 1 (Chair: Richard Lareau, TSA)
|
Depth Profiling/Quantitative Analysis 1 (Chair: Richard Lareau, TSA) |
1:00-1:20 PM “Characterization of Advanced CMOS Process with Reverse SIMS
Profiling”, J.J. Lee and Jack Jiang, Motorola,
1:20- 1:40
PM
“Investigation of Copper Diffusion through Ta and TiSiN Barriers using Frontside
SIMS after Chemical Etching and Backside SIMS”, Joe Bennett, International
Sematech, Austin, Texas
1:40- 2:00 PM “Reference Samples for SIMS:
Reduced Pressure Chemical Vapor Deposition as an Alternative to Molecular Beam
Epitaxy”, F.
Laugier, CEA-DRT,
2:00- 2:20 PM 'Nitrogen Depth Profiling
in 1.5-3 nm Silicon Oxynitride Films Using SIMS with Oxygen
Bombardment”, Marc Juhel,
2:20-2:40 PM “Quantitative Measurement of Si Interstitials in a Si/SiGe:C System for Boron Diffusion Analysis Using SIMS”, Temel H.
Buyuklimanli, Evans East
2:40-3:10 PM Afternoon
Break
Organic
SIMS Fundamentals (Chair: Steve Hues, Motorola)
3:10-3:40 PM “Unraveling the Puzzle: Recent
Insights from the keV Cluster Bombardment of More Realistic Model Systems of
Organic Targets” (Tutorial), Kristin Krantzman,
3:40- 4:00
PM
“Secondary Ion Emission from Thick Organic Films: Influence of Primary Ion
Bombardment Conditions”, Birgit Hagenhoff, TASCON
4:00-
5:20 PM Poster
Session
1. “Bevel
Depth Profiling SIMS of Oxidized AlGaAs Superlattice Samples",
Greg Gillen, Albert Fahey and
Scott Wight, NIST
2. “Preliminary Evaluation of Positive
Secondary Ion Yield Enhancements Using Chlorodifluoromethane Backfilling”,
Peter Chi and Greg Gillen, NIST,
3. "TOF-SIMS of High
Explosive Particles”
Sonya
Roberson and Greg Gillen, NIST,
4. “SIMS Analysis Reproducibility
Using SC-Ultra 300 Magnetic Sector Instrument”,
M. Barozzi,
5. “The Effects of Rapid Thermal
Processing on Boron and Arsenic Implants in n-type Germanium Substrates”, Jim
Christiansen, Motorola
6. “Improvement of Detection Limit for Residual Gas
Species”,
A.
7. “Low Energy Electron Ionization
of Gaseous Ions”, S.
8. “How Can the Relaxation Process
of the Excited Electronic Subsystem in a Solid Affect the Ionization
Probability of Sputtered Atoms?”, Sergey Belykh,
9.
“Emission of Doubly Charged Ions Under the Bombardment of Silicon by
Heavy and Light Molecular Projectiles”, Sergey Belykh,
10. “Si-Ge Interactive Reference
Materials”, David Simons, NIST,
11. “The Dependence of the Amount
of Cs retained by Si (100) during sputtering on the Cs+ incident Energy
and Angle”,Corina Lupu, University of Houston
(student award winner)
12. “The Determination of Grain
Boundary Diffusion Using SIMS”, Steve Schwarz,
13.
"Energy Distributions of Cluster Ions Sputtered from Alkanethiol
Layers",
B. Arezki, A. Delcorte and P. Bertrand, PCPM, Universite
14. “Towards Application-Specific SIMS Instruments” or “Why SIMS
Instruments Always go up in Price”, Fraser Reich, Kore Technology, LTD
15. “Low Energy Ion Implantation of Wideband-gap Semiconductors for
Improved Resistance Ohmic Contacts”, M.C. Wood, Army Research Laboratory
6:00 — 10:30 PM Boat Cruise
Buses will
begin departing the Hotel at 6:00 PM
7:30 - 8:00 AM Continental
Breakfast
Advances in SIMS Instrumentation Analysis (Chair: Peter Williams,
8:00- 8:30
AM “Design
Considerations for TOF-SIMS Instruments”,
(Tutorial) Bruno
Schueler, Physical Electronics
8:30- 8:50
PM
“Gas-Cluster Ion Beam for SIMS Analysis of Thin Films”, D.B.
Fenner and Y. Shao, Epion Corp.
8:50-9:10 PM
“Miniature electron flood gun for an ion trap
secondary ion mass spectrometer”, A.D. Appelhans,
Idaho National Engineering and Environmental Laboratory
9:10- 9:40 AM
Morning Break
Quantitative
Analysis by SIMS (Chair: Jerry Hunter, Accurel)
9:40-10:00 AM “Quantitative
Study of Oxygen Enhancement of Sputtered Ion Yields 1: Experimental Results,
10:00-10:20 AM “Quantitative
Study of Oxygen Enhancement of Sputtered Ion Yields 2: Theoretical
Implications”, Peter Williams,
10:20- 10:40 AM “Sputter Rate Variations, Surface Roughening and Cs Retention
Occurring During the Sputtering of Silicon with Cs+ Primary Ions”, P.A.W. van der
Heide,
10:40-11:00 AM
“Absolute Dose Quantification of
Arsenic Shallow Implants by the LEXAS Technique”, C. Hombourger, Cameca
11:00-11:20 PM
“Accurate Measurement of SiGe Based Structures with Magnetic Sector SIMS
Instruments”, A. Merkulov, Cameca Instruments
11:20-11:40
PM “Quantification
of Al in GaN by SIMS Analysis”, J. Gu, NC State University (student
award winner).
11:40 PM Closing
Remarks
The Annual
Workshop on SIMS gratefully acknowledges the generous support of the following
companies through the sustaining members program.
Sustaining
Members/Exhibitors
Charles Evans and Associates
Physical
Electronics
ION-TOF
Microphotonics
Ionoptika
Cameca
Instruments
Accurel
The following
corporate sponsors have graciously helped to sponsor the Workshop’s welcome
reception and lunches.
Cameca
Instruments
ION-TOF
GmbH
Physical
Electronics
This
workshop is co-sponsored by:
National
Motorola
Transportation
Security Administration
