Semiconductor Characterization for the Year 2000 and Beyond (Chair: Charles Magee,Evans East)

8:15 - 8:45 AM, Current and Future Needs for SIMS Depth Profiling - Larry Larson (Sematech)

8:45 - 9:15 AM, Current State of the Art for Ultrashallow Profiling - Paul Ronsheim (IBM)

9:15- 9:45 AM, Surface Metal Contamination- Steve Smith (Charles Evans and Associates)

9:45-10:15 AM, Break

Fundementals of SIMS Depth Profiling (Chair: Dave Simons,NIST)

10:15 - 10:45 AM, Fundamentals of the Pre-Equilibrium Region - Mark Dowsett (University of Warwick)

10:45 - 11:15 AM, Segregation Effects in SIMS Depth Profiling - Steve Hues (Motorola)

11:15 - 11:45 AM, SIMS Analysis of Atmospheric Species - Mike Geva (Lucent Technologies)

11:45 - 12:15 PM, Quantitation by SIMS - Jerry Hunter (Intel)

Organic Characterization by SIMS (Chair: Steve Hues)

1:15 - 1:45 PM, A Mechanistic Picture of the Sputtering Process in Organic Surfaces - Reema Chatterjee (Pennsylvania State University)

1:45 - 2:45 PM, Practical Spectral Interpretation - Pat Lindley (Charles Evans and Associates), Fraser Reich (PHI), Scott Bryan (PHI)

2:45- 3:15 PM, Break

3:15 - 3:35 PM, ToF-SIMS Characterization of Industrial Polymers - Alan Galuska (Exxon)

3:35 - 3:55 PM, Use of Imaging TOF-SIMS as a High Throughput Screening Technique for Combinational Chemistry and Drug Discovery Research - Robert Braun (Pennsylvania State University)

Workshop Sponsor Presentations - Session #1

3:55 - 4:15 PM, Atomika Presentation

4:15 - 4:35 PM, Cameca Presentation

4:35 - 5:05 PM,Award Winner Short Presentations- Rainer Loesing, Gregory Fisher, Michaeleen Pacholski, Jeroen Deleu

8:00 - 8:20 AM, Optimized Ultra-Shallow Depth profiling using the Cameca 6F, Jennifer McKinely (Lucent Technologies)

8:20 - 8:40 AM, Sputtering Rate Change and Surface Roughening in SIMS Measurements using Oblique and normal incidence O₂⁺ Bombardment, With and Without O₂ Flooding - Charles Magee (Evans East)

8:40 - 9:00 AM, Detection of the SiO₂/Si Interface in Ultra Shallow TOF-SIMS Depth Profiling - Karsten Iltgen (AMD)

Panel Members: Jerry Hunter, Charles Magee, Mark Dowsett, Paul Ronshiem, Karsten Iltgen

10:30 - 11:00 AM, Tutorial on Complementary Techniques to SIMS - Steve Schauer (Motorola)

11:00 - 11:30 AM, Analysis of Insulating Material - Kamal Soni (Corning)

11:30 - 11:50 AM, Isotope Ratios Measurements of Interstellar Dust using SIMS - Scott Messenger (NIST)

1:00 - 1:30 PM, Polyatomic Primary Ions for SIMS: A Review - Greg Gillen (NIST)

1:30 - 1:50 PM, Variations of Secondary Ion Yields in TOF-SIMS as a Function of Primary Beam Species for a Range of Organic and Inorganic Materials - Fraser Reich (Physical Electronics)

1:50 - 2:10 PM, Static SIMS and Raman Spectroscopic Studies of Interfacial Chemistry at Mineral and Model Surfaces - Jani Ingram (Idaho National Engineering and Environmental Laoratory)

2:30 -3:00 PM, Status and Activities of Annual Workshop on SIMS, Inc./ASTM SIMS Subcommittee Meeting/Update on SIMS WWW Page and Listserver/Selection of Future Meeting Sites/Proposed Sustaining Members Program - Richard Lareau, Greg Gillen, Steve Hues

Workshop Sponsor Presentations - Session #2

3:55 - 4:15 PM, Physical Electronics Presentation

8:00 - 8:30 AM An Overview of the design and Operation of Ion Sources used for SIMS - Frank Chmara (Peabody Scientific)

8:30 - 9:00 AM Turbopumps for Semiconductor Applications - Roberto Cerruti (Varian)

9:00 - 9:30 AM Ion Detection Issues in Reflectron Time-of-Flight SIMS/MSRI Spectrometers - Al Schultz (Ionwerks)

9:30 - 10:00 AM Open Discussion on Standards for SIMS (Concentration, depth, and lateral resolution) - Fred Stevie (Lucent Technologies)

10:30 - 10:50 AM On the Quantification of Secondary Ion Emission with the Infinite Velocity Method - Klaus Franzreb (Surface Science Western)

10:50 - 11:10 AM Characterization of Blister Defects - Paul Oakey (Motorola)

11:10 - 11:30 AM Recent Advances in Low-Level Impurity Measurements using Trace-Element Accelerator Mass Spectrometry - Sameer Datar (University of North Texas)

11:30 - 11:50 AM Time-of-Flight SIMS Studies of Adsorbed Proetien Mixtures - Jean Benot Lhoest (University of Washington)

Three-Dimensional Imaging of Grain Structure in Polycrystalline Nickel Alloys - Cindy Huctwith (Surface Science Western)

Remote SIMS Operation using the Internet - Michael Wiedenbeck (University of New Mexico)

Precision Depth Measurement of Ultrashallow SIMS Craters Using a Stylus Profilometer - Mustafa Oyumi (KLA-Tencor)

Utilization of Molecular Reference Ions for Quantitative Measurement of N and B in SiC with Secondary Ion Mass Spectrometry (SIMS) - Rainer Loesing (North Carolina State University)

TOF-SIMS Characterizaton of (-Functionialized Self-Assembled Monolayers Prior to and Following Vapor Deposition of Al - Gregory Fisher (Pennsylvania State University)

Characterization of Molecular Orientation within Phospholipid Membranes Using TOF-SIMS -Michaeleen Pacholski (Pennsylvania State University)

Transient Sputter Yields of Si With and Without Oxygen Flooding - J. Deleu (Catholic University of Leuven)

Low Energy SIMS with the Atomika 4500 - S.B. Patel (Atomika Instruments)

On the Cluster Formation Mechanism in Sputtering of Metals by Atomic and Molecular - Sergey Belykh (Academy of Sciences of Uzbekistan)

On the Use of Deconvolution Procedures in SIMS: I. Kinetic Energy Distributions of Secondary Ions - I. V. Veryovkin (University of Antwerp)

Development of SRM 2134, an As Implant in Si Standard for SIMS - Dave Simons (NIST)

Secondary Ion Mass Spectrometric Characterization of As and Sb Implanted into SiC - Peter Chi (NIST)

A Standard Method for the Characterization of Dead Time in Electron Multipliers - Al Fahey (NIST)

A Preliminary Study of the Decay Fractions of Secondary Ions Sputtered by Atomic and Polyatomic Primary Ions - Michael Van Stipdonk (Texas A&M University)

Surface Characterization of Inorganic Targets Using TOF-SIMS and XPS - Dina Justes (Texas A&M University)

Continued Development of an SF₅⁺ Ion Source for SIMS - Greg Gillen (NIST)

Application of Polyatomic Ion Beams for Organic SIMS using an Ion Microscope - Sonia Robertson (NIST)

A Study of the Effectiveness of Polyatomic Primary Ions Used in SIMS - Chris Diehnelt (Texas A&M University)

SIMS Study of Nitogen Incorporated Nanaocrystalline Diamond Thin Films Grown From N2/CH4 Microwave Plasmas - Dan Zhou (University of Central Florida)

Investigation of 0^o Tilt Implants - Jeff Chen (Motorola)

Development of a Compound Identification Tool to Assist in the Interpretation of TOF-SIMS Mass Spectral Data - Hanyu Xiao (Physical Electronics)

Characterization of Multi-Layer Automotive Coatings by TOF-SIMS - Anna Belu (Physical Electronics)

High Sensitivity Quadrupole SIMS - Bruno Schueler (Physical Electronics)

On the Use of Deconvolution Procedures in SIMS: II. Mass Spectra of Secondary Ions - I. V. Veryovkin (University of Antwerp)

Surface Characterization of PVD Iridium Thin Film using Time-of-Flight Secondary Ion Mass Spectrometry - J. J. Lee (Motorola)

SIMS Characterization of Phosphorus Diffusion in Tunnel Oxide and its Interface - Liying Wu (Motorola)

SIMS Workshop 1998

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